Inventor · disambiguated record
Milton J. Boden, Jr.
Also filed as: BODEN JR MILTON J · BODEN JR MILTON JOHN · BODEN MILTON · BODEN MILTON J
14 granted patents·1 pending application·449 citations·filing 1997–2008
93Inventor score
Top patents by PatentIndex Score
15 records- 0196US6452230B1High voltage mosgated device with trenches to reduce on-resistanceINT RECTIFIER CORP·Filed 1999·Granted Sep 17, 2002·211 cites·7 claims
- 0289US6236099B1Trench MOS device and process for radhard deviceINT RECTIFIER CORP·Filed 1997·Granted May 22, 2001·77 cites·7 claims
- 0388US6380004B2Process for manufacturing radhard power integrated circuitINT RECTIFIER CORP·Filed 2001·Granted Apr 30, 2002·53 cites·16 claims
- 0478US6476456B1Integrated radiation hardened power mosgated device and schottky diodeINT RECTIFIER CORP·Filed 2000·Granted Nov 5, 2002·25 cites·13 claims
- 0575US6747312B2Rad hard MOSFET with graded body diode junction and reduced on resistanceINT RECTIFIER CORP·Filed 2002·Granted Jun 8, 2004·18 cites·22 claims
- 0675US6165821AP channel radhard device with boron diffused P-type polysilicon gateINT RECTIFIER CORP·Filed 1998·Granted Dec 26, 2000·33 cites·18 claims
- 0771US7547585B2P channel Rad Hard MOSFET with enhancement implantINT RECTIFIER CORP·Filed 2005·Granted Jun 16, 2009·4 cites·5 claims
- 0867US8125024B2Trench MOSgated device with deep trench between gate trenchesBODEN MILTON J·Filed 2008·Granted Feb 28, 2012·5 cites·10 claims
- 0965US6798016B2Trench MOS device and process for radhard deviceINT RECTIFIER CORP·Filed 2001·Granted Sep 28, 2004·11 cites·18 claims
- 1051US6894345B2P channel Rad Hard MOSFET with enhancement implantINT RECTIFIER CORP·Filed 2002·Granted May 17, 2005·4 cites·22 claims
- 1150US6972231B2Rad Hard MOSFET with graded body diode junction and reduced on resistanceINT RECTIFIER CORP·Filed 2004·Granted Dec 6, 2005·4 cites·20 claims
- 1236US7569901B1P channel radhard device with boron diffused P-type polysilicon gateINT RECTIFIER CORP·Filed 2000·Granted Aug 4, 2009·0 cites·10 claims
- 1335US6965130B2Alternating implant ring terminationsINT RECTIFIER CORP·Filed 2003·Granted Nov 15, 2005·0 cites·13 claims
- 1432US6707103B1Low voltage rad hard MOSFETINT RECTIFIER CORP·Filed 1999·Granted Mar 16, 2004·4 cites·6 claims
- 1532US2003168695A1Silicide gate process for trench MOSFETINT RECTIFIER CORP·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →