Inventor · disambiguated record
Randhir P. S. Thakur
Also filed as: THAKUR RANDHIR · THAKUR RANDHIR P · THAKUR RANDHIR P S · THAKUR RANDHIR P SINGH
292 granted patents·37 pending applications·10,563 citations·filing 1992–2016
99Inventor score
Files withMICRON TECHNOLOGY INC236APPLIED MATERIALS INC40MICRON SEMICONDUCTOR INC12THAKUR RANDHIR6STEAG RTP SYSTEMS INC5
Top patents by PatentIndex Score
329 records- 0199US9773695B2Integrated bit-line airgap formation and gate stack post cleanAPPLIED MATERIALS INC·Filed 2016·Granted Sep 26, 2017·113 cites·15 claims
- 0299US9165786B1Integrated oxide and nitride recess for better channel contact in 3D architecturesAPPLIED MATERIALS INC·Filed 2014·Granted Oct 20, 2015·184 cites·15 claims
- 0399US9159606B1Metal air gapAPPLIED MATERIALS INC·Filed 2014·Granted Oct 13, 2015·201 cites·15 claims
- 0498US9991134B2Processing systems and methods for halide scavengingAPPLIED MATERIALS INC·Filed 2014·Granted Jun 5, 2018·100 cites·17 claims
- 0598US9704723B2Processing systems and methods for halide scavengingAPPLIED MATERIALS INC·Filed 2015·Granted Jul 11, 2017·114 cites·17 claims
- 0698US9659792B2Processing systems and methods for halide scavengingAPPLIED MATERIALS INC·Filed 2015·Granted May 23, 2017·125 cites·13 claims
- 0798US9496167B2Integrated bit-line airgap formation and gate stack post cleanAPPLIED MATERIALS INC·Filed 2014·Granted Nov 15, 2016·132 cites·5 claims
- 0898US9449850B2Processing systems and methods for halide scavengingAPPLIED MATERIALS INC·Filed 2015·Granted Sep 20, 2016·135 cites·18 claims
- 0998US9378978B2Integrated oxide recess and floating gate fin trimmingAPPLIED MATERIALS INC·Filed 2014·Granted Jun 28, 2016·132 cites·15 claims
- 1098US9184055B2Processing systems and methods for halide scavengingAPPLIED MATERIALS INC·Filed 2014·Granted Nov 10, 2015·181 cites·20 claims
- 1198US9153442B2Processing systems and methods for halide scavengingAPPLIED MATERIALS INC·Filed 2014·Granted Oct 6, 2015·220 cites·13 claims
- 1298US9093371B2Processing systems and methods for halide scavengingAPPLIED MATERIALS INC·Filed 2014·Granted Jul 28, 2015·184 cites·17 claims
- 1398US9023732B2Processing systems and methods for halide scavengingAPPLIED MATERIALS INC·Filed 2014·Granted May 5, 2015·187 cites·14 claims
- 1498US5340765AMethod for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysiliconMICRON SEMICONDUCTOR INC·Filed 1993·Granted Aug 23, 1994·252 cites·34 claims
- 1596US8288683B2Fast axis beam profile shaping for high power laser diode based annealing systemJENNINGS DEAN·Filed 2008·Granted Oct 16, 2012·34 cites·24 claims
- 1696US7179703B2Method of forming shallow doped junctions having a variable profile gradation of dopantsMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 20, 2007·26 cites·16 claims
- 1796US6677247B2Method of increasing the etch selectivity of a contact sidewall to a preclean etchantAPPLIED MATERIALS INC·Filed 2002·Granted Jan 13, 2004·116 cites·24 claims
- 1896US6281141B1Process for forming thin dielectric layers in semiconductor devicesSTEAG RTP SYSTEMS INC·Filed 1999·Granted Aug 28, 2001·553 cites·16 claims
- 1996US5382533AMethod of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injectionMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jan 17, 1995·143 cites·6 claims
- 2095US7175713B2Apparatus for cyclical deposition of thin filmsAPPLIED MATERIALS INC·Filed 2003·Granted Feb 13, 2007·110 cites·11 claims
- 2195US6436818B1Semiconductor structure having a doped conductive layerMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 20, 2002·114 cites·17 claims
- 2294US5634974AMethod for forming hemispherical grained siliconMICRON TECHNOLOGIES INC·Filed 1995·Granted Jun 3, 1997·101 cites·74 claims
- 2394US5407534AMethod to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum annealMICRON SEMICONDUCTOR INC·Filed 1993·Granted Apr 18, 1995·158 cites·42 claims
- 2493US6526547B2Method for efficient manufacturing of integrated circuitsMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 25, 2003·66 cites·23 claims
- 2593US6362086B2Forming a conductive structure in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 26, 2002·108 cites·25 claims
- 2693US6325017B1Apparatus for forming a high dielectric filmMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 4, 2001·97 cites·16 claims
- 2793US6298470B1Method for efficient manufacturing of integrated circuitsMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 2, 2001·133 cites·21 claims
- 2893US5963833AMethod for cleaning semiconductor wafers andMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 5, 1999·92 cites·17 claims
- 2993US5910880ASemiconductor circuit components and capacitorsMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 8, 1999·98 cites·5 claims
- 3093US5759262AMethod of forming hemispherical grained siliconMICRON TECHNOLOGY INC·Filed 1997·Granted Jun 2, 1998·86 cites·26 claims
- 3193US5656531AMethod to form hemi-spherical grain (HSG) silicon from amorphous siliconMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 12, 1997·119 cites·47 claims
- 3292US6669782B1Method and apparatus to control the formation of layers useful in integrated circuitsFiled 2000·Granted Dec 30, 2003·51 cites·15 claims
- 3392US6403923B1System for controlling the temperature of a reflective substrate during rapid heatingMATTSON TECH INC·Filed 2000·Granted Jun 11, 2002·66 cites·20 claims
- 3492US6380103B2Rapid thermal etch and rapid thermal oxidationMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 30, 2002·47 cites·27 claims
- 3592US6015997ASemiconductor structure having a doped conductive layerMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 18, 2000·87 cites·22 claims
- 3692US5837580AMethod to form hemi-spherical grain (HSG) siliconMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 17, 1998·105 cites·8 claims
- 3791US7579232B1Method of making a nonvolatile memory device including forming a pillar shaped semiconductor device and a shadow maskSANDISK 3D LLC·Filed 2008·Granted Aug 25, 2009·38 cites·20 claims
- 3891US5658381AMethod to form hemispherical grain (HSG) silicon by implant seeding followed by vacuum annealMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 19, 1997·87 cites·47 claims
- 3990US6461982B2Methods for forming a dielectric filmMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 8, 2002·74 cites·16 claims
- 4090US6200023B1Method for determining the temperature in a thermal processing chamberSTEAG RTP SYSTEMS INC·Filed 1999·Granted Mar 13, 2001·92 cites·35 claims
- 4190US6174651B1Method for depositing atomized materials onto a substrate utilizing light exposure for heatingSTEAG RTP SYSTEMS INC·Filed 1999·Granted Jan 16, 2001·75 cites·29 claims
- 4289US6803297B2Optimal spike anneal ambientAPPLIED MATERIALS INC·Filed 2002·Granted Oct 12, 2004·49 cites·20 claims
- 4389US6291868B1Forming a conductive structure in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 18, 2001·76 cites·15 claims
- 4489US5835225ASurface properties detection by reflectance metrologyMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 10, 1998·99 cites·23 claims
- 4589US5425392AMethod DRAM polycide rowline formationMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jun 20, 1995·76 cites·1 claims
- 4689US5376593AMethod for fabricating stacked layer Si3 N4 for low leakage high capacitance films using rapid thermal nitridationMICRON SEMICONDUCTOR INC·Filed 1992·Granted Dec 27, 1994·116 cites·25 claims
- 4788US8536492B2Processing multilayer semiconductors with multiple heat sourcesRAMAMURTHY SUNDAR·Filed 2005·Granted Sep 17, 2013·17 cites·3 claims
- 4888US7674999B2Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing systemAPPLIED MATERIALS INC·Filed 2006·Granted Mar 9, 2010·11 cites·16 claims
- 4988US6589877B1Method of providing an oxideMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 8, 2003·27 cites·2 claims
- 5088US6207587B1Method for forming a dielectricMICRON TECHNOLOGY INC·Filed 1997·Granted Mar 27, 2001·78 cites·40 claims
Showing the top 50 of 329 patent records by PatentIndex Score.
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