Inventor · disambiguated record
Jung-Deog Lee
Also filed as: LEE JUNG-DEOG
4 granted patents·7 pending applications·7 citations·filing 2007–2013
65Inventor score
Top patents by PatentIndex Score
11 records- 0170US8084318B2Methods of fabricating integrated circuit devices including strained channel regions and related devicesKIM KI-CHUL·Filed 2010·Granted Dec 27, 2011·3 cites·17 claims
- 0265US7972958B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·3 cites·18 claims
- 0361US7981784B2Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 19, 2011·1 cites·13 claims
- 0449US2014035051A1Semiconductor device and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 0549US2009256214A1Semiconductor device and associated methodsSUN MIN-CHUL·Filed 2009·Application pending·0 cites
- 0647US7939452B2Method of manufacturing transistor having metal silicide and method of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 10, 2011·0 cites·19 claims
- 0745US2012164807A1Method of fabricating a semiconductor deviceSUN MIN-CHUL·Filed 2012·Application pending·0 cites
- 0845US2008191244A1Methods of fabricating integrated circuit devices including strained channel regions and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 0942US2009085125A1MOS transistor and CMOS transistor having strained channel epi layer and methods of fabricating the transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1042US2008113517A1Methods of fabricating semiconductor devices including selectively reacting reactant gasesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1141US2009085075A1Method of fabricating mos transistor and mos transistor fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
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