Inventor · disambiguated record
Hong Pin Lin
Also filed as: LIN HONG · LIN HONG PIN
7 granted patents·3 pending applications·16 citations·filing 2005–2025
76Inventor score
Top patents by PatentIndex Score
10 records- 0194US12027594B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 2, 2024·4 cites·20 claims
- 0289US7488699B2Hollow mesoporous carbon electrode-catalyst for direct methanol fuel cell and preparation thereofIND TECH RES INST·Filed 2005·Granted Feb 10, 2009·12 cites·9 claims
- 0382US2025331264A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0481US12414347B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 0573US12068398B2Fin field-effect transistor with void and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 0673US2024371980A1Fin Field-Effect Transistor With Void and Method of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0771US2025299957A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0862US12347689B2Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·19 claims
- 0954US11664444B2Fin field-effect transistor with void and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 1044US12080589B2Formation method of semiconductor structureSHANGHAI IC R&D CT CO LTD·Filed 2019·Granted Sep 3, 2024·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →