Inventor · disambiguated record
Samuel James Bader
Also filed as: BADER SAMUEL · BADER SAMUEL JAMES
5 granted patents·11 pending applications·0 citations·filing 2019–2022
58Inventor score
Top patents by PatentIndex Score
16 records- 0156US12336268B2Gallium nitride (GaN) integrated circuit technologyINTEL CORP·Filed 2021·Granted Jun 17, 2025·0 cites·19 claims
- 0253US2024203815A1Layer transfer diode or thin-film resistor for gallium nitride (gan) integrated circuit technologyINTEL CORP·Filed 2022·Application pending·0 cites
- 0352US12302618B2Gallium nitride (GaN) selective epitaxial windows for integrated circuit technologyINTEL CORP·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 0452US2024203978A1Layer transfer clamp for gallium nitride (gan) integrated circuit technologyINTEL CORP·Filed 2022·Application pending·0 cites
- 0551US2024222440A1Transistor with a body and back gate structure in different material layersINTEL CORP·Filed 2022·Application pending·0 cites
- 0650US2024203979A1Layer transfer transistor for gallium nitride (gan) integrated circuit technologyINTEL CORP·Filed 2022·Application pending·0 cites
- 0748US2024213140A1Integrated circuit structures having backside highINTEL CORP·Filed 2022·Application pending·0 cites
- 0847US2023097805A1Complex field-shaping by fine variation of local material density or propertiesINTEL CORP·Filed 2021·Application pending·0 cites
- 0947US2024204091A1Low aluminum concentration aluminum gallium nitride interlayer for group iii-nitride (iii-n) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 1047US2024213118A1Gallium nitride (gan) devices with through-silicon viasINTEL CORP·Filed 2022·Application pending·0 cites
- 1146US2023054719A1Gallium nitride (gan) layer transfer and regrowth for integrated circuit technologyINTEL CORP·Filed 2021·Application pending·0 cites
- 1245US2024021725A1Gallium nitride (gan) transistors with lateral drain depletionINTEL CORP·Filed 2022·Application pending·0 cites
- 1344US2023069054A1Gallium nitride (gan) integrated circuit technology with multi-layer epitaxy and layer transferINTEL CORP·Filed 2021·Application pending·0 cites
- 1439US11710785B2RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltagesUNIV CORNELL·Filed 2020·Granted Jul 25, 2023·0 cites·48 claims
- 1539US11522080B2High-voltage p-channel FET based on III-nitride heterostructuresUNIV CORNELL·Filed 2019·Granted Dec 6, 2022·0 cites·25 claims
- 1637US11158709B2Polarization-induced 2D hole gases for high-voltage p-channel transistorsUNIV CORNELL·Filed 2019·Granted Oct 26, 2021·0 cites·38 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →