Inventor · disambiguated record
Qingtian Ma
Also filed as: MA QINGTIAN
3 granted patents·2 citations·filing 2008–2011
55Inventor score
Technology areasH10P
Files withSEMICONDUCTOR MFG INT SHANGHAI3
Top patents by PatentIndex Score
3 records- 0171US8367554B2Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrateSEMICONDUCTOR MFG INT SHANGHAI·Filed 2011·Granted Feb 5, 2013·2 cites·11 claims
- 0255US8039402B2Methods for forming a gate and a shallow trench isolation region and for planarizating an etched surface of silicon substrateSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Oct 18, 2011·0 cites·9 claims
- 0350US8377827B2Methods for forming a gate and a shallow trench isolation region and for planarizing an etched surface of silicon substrateSEMICONDUCTOR MFG INT SHANGHAI·Filed 2011·Granted Feb 19, 2013·0 cites·12 claims
Join the waitlist — get patent alerts
Get an alert when Qingtian Ma files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →