Inventor · disambiguated record
Ji-Hye Yi
Also filed as: YI JI-HYE
34 granted patents·5 pending applications·836 citations·filing 2002–2017
98Inventor score
Top patents by PatentIndex Score
39 records- 0198US6894305B2Phase-change memory devices with a self-heater structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 17, 2005·388 cites·31 claims
- 0296US7126847B2Method and driver for programming phase change memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 24, 2006·51 cites·22 claims
- 0395US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0495US7462900B2Phase changeable memory devices including nitrogen and/or siliconSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 9, 2008·34 cites·22 claims
- 0594US7476917B2Phase-changeable memory devices including nitrogen and/or silicon dopantsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 13, 2009·31 cites·12 claims
- 0692US7642622B2Phase changeable memory cells and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 5, 2010·24 cites·13 claims
- 0791US7402851B2Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 22, 2008·49 cites·19 claims
- 0891US7037749B2Methods for forming phase changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·40 cites·25 claims
- 0990US10121791B2Multi-gate transistorSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 6, 2018·7 cites·20 claims
- 1087US8426916B2Semiconductor integrated circuit devices having different thickness silicon-germanium layersKIM MYUNG-SUN·Filed 2012·Granted Apr 23, 2013·7 cites·6 claims
- 1187US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 1286US7763878B2Phase changeable memory device structuresSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 27, 2010·11 cites·15 claims
- 1385US9786785B2Semiconductor device, method for fabricating the same, and memory system including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 10, 2017·4 cites·9 claims
- 1484US9312376B2Semiconductor device, method for fabricating the same, and memory system including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 12, 2016·6 cites·18 claims
- 1582US6635921B2Semiconductor memory device having a multiple tunnel junction layer pattern and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 21, 2003·24 cites·19 claims
- 1680US7397092B2Phase changable memory device structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·5 cites·24 claims
- 1779US7394087B2Phase-changeable memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 1, 2008·13 cites·15 claims
- 1879US7126846B2Method and driver for programming phase change memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 24, 2006·9 cites·17 claims
- 1978US8207033B2Methods of fabricating different thickness silicon-germanium layers on semiconductor integrated circuit devices and semiconductor integrated circuit devices fabricated therebyKIM MYUNG-SUN·Filed 2009·Granted Jun 26, 2012·5 cites·21 claims
- 2076US7981750B2Methods of fabrication of channel-stressed semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 19, 2011·6 cites·23 claims
- 2176US7692176B2Phase-changeable memory devices including an adiabatic layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 6, 2010·6 cites·15 claims
- 2276US7082051B2Method and driver for programming phase change memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 25, 2006·22 cites·12 claims
- 2375US7889548B2Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 15, 2011·6 cites·12 claims
- 2466US7879668B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 1, 2011·2 cites·20 claims
- 2565US7989259B2Methods of manufacturing phase-changeable memory devices including upper and lower electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 2, 2011·2 cites·17 claims
- 2664US7791146B2Semiconductor device including field effect transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·2 cites·9 claims
- 2762US6707089B2Semiconductor memory device having a multiple tunnel junction pattern and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 16, 2004·14 cites·12 claims
- 2858US6686240B2Semiconductor memory device having a multiple tunnel junction layer pattern and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 3, 2004·5 cites·15 claims
- 2956US7741631B2Phase-changeable memory devices including phase-changeable materials on silicon nitride layersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 22, 2010·2 cites·10 claims
- 3056US7606064B2Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 20, 2009·3 cites·22 claims
- 3150US6998306B2Semiconductor memory device having a multiple tunnel junction pattern and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 14, 2006·7 cites·10 claims
- 3249US8513051B2Methods of forming phase-changeable memory devices including an adiabatic layerHA YONG-HO·Filed 2010·Granted Aug 20, 2013·0 cites·9 claims
- 3349US2010006906A1Semiconductor device, single crystalline silicon wafer, and single crystalline silicon ingotRHEE HWA-SUNG·Filed 2009·Application pending·0 cites
- 3447US7569430B2Phase changeable structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 4, 2009·0 cites·14 claims
- 3546US8338261B2Semiconductor device including field effect transistor and method of forming the sameKIM MYUNG-SUN·Filed 2010·Granted Dec 25, 2012·0 cites·11 claims
- 3646US2008067545A1Semiconductor device including field effect transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3744US2009096037A1Semiconductor device having recessed field region and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3842US2008121992A1Semiconductor device including diffusion barrier region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3933US2016141381A1Semiconductor devices and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →