Inventor · disambiguated record
Jung-Jui Li
Also filed as: LI JUNG-JUI
16 granted patents·2 pending applications·105 citations·filing 2013–2024
92Inventor score
Top patents by PatentIndex Score
18 records- 0198US9418994B1Fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·71 cites·19 claims
- 0296US11532748B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
- 0394US9818648B2Method for forming Fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·11 cites·18 claims
- 0491US11764280B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·2 cites·20 claims
- 0590US9660084B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·5 cites·20 claims
- 0689US10269963B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 0789US10090396B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 2, 2018·4 cites·20 claims
- 0886US2024372000A1Semiconductor Device Structure and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0986US2024387678A1Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1085US12159916B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 1184US9673112B2Method of semiconductor fabrication with height control through active region profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 6, 2017·3 cites·20 claims
- 1280US12100765B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
- 1378US10790394B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·1 cites·20 claims
- 1468US10312149B1Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·1 cites·20 claims
- 1563US10714587B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·0 cites·20 claims
- 1657US9978652B2Method of semiconductor fabrication with height control through active region profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·0 cites·20 claims
- 1748US9704719B2Systems and methods to mitigate nitride precipitatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 11, 2017·0 cites·20 claims
- 1843US8916052B2Resist techniqueTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 23, 2014·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →