Inventor · disambiguated record
Te-An Chen
Also filed as: CHEN TE-AN
27 granted patents·5 pending applications·3 citations·filing 2019–2025
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD32
Top patents by PatentIndex Score
32 records- 0188US2025318159A1Schottky barrier diode with reduced leakage current and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0287US12363925B2Schottky barrier diode with reduced leakage current and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0385US11854863B2Semiconductor device including an isolation region having an edge being covered and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
- 0485US11349010B2Schottky barrier diode with reduced leakage current and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 31, 2022·2 cites·20 claims
- 0584US12114496B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 0684US2024381632A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0782US12308279B2Semiconductor device including an isolation region having an edge being covered and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 0882US2024347579A1Semiconductor device having capacitor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0981US12484288B2Semiconductor device with first and second source/drain epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·20 claims
- 1080US12087809B2Semiconductor device having capacitor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 1179US11984490B2Schottky barrier diode with reduced leakage current and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·0 cites·20 claims
- 1279US11778815B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 1379US2025253188A1Semiconductor device including an isolation region having an edge being covered and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1477US12261175B2Method for forming integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 1575US11935791B2Semiconductor devices having controlled S/D epitaxial shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 1673US11569267B2Method for forming integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 1773US11532694B2Semiconductor device having capacitor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 1872US11355507B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·0 cites·20 claims
- 1971US11855080B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2071US2023378293A1Mask-free process for improving drain to gate breakdown voltage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2170US11916079B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 2268US11515212B2Method of manufacturing semiconductor devices having controlled S/D epitaxial shapeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 2367US11894273B2Methods of forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 2463US11799006B2Mask-free process for improving drain to gate breakdown voltage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 2563US11450660B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·20 claims
- 2663US11069714B1Boundary scheme for semiconductor integrated circuit and method for forming an integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 2763US10868108B2Semiconductor device having high voltage lateral capacitor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 2860US11404410B2Semiconductor device having different voltage regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·13 claims
- 2960US11081500B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·19 claims
- 3059US11508816B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·0 cites·20 claims
- 3151US12132094B2Semiconductor device including strained transistor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 29, 2024·0 cites·20 claims
- 3250US12490510B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 2, 2025·0 cites·18 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →