Inventor · disambiguated record
Young-Sub You
Also filed as: YOU YOUNG · YOU YOUNG-SUB
23 granted patents·12 pending applications·141 citations·filing 2003–2014
95Inventor score
Top patents by PatentIndex Score
35 records- 0188US7741222B2Etch stop structure and method of manufacture, and semiconductor device and method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 22, 2010·17 cites·11 claims
- 0287US8970039B2Integrated circuit devices including electrode support structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Mar 3, 2015·9 cites·15 claims
- 0384US7803679B2Method of forming a vertical diode and method of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 28, 2010·8 cites·6 claims
- 0483US7524747B2Floating gate memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 28, 2009·7 cites·12 claims
- 0582US7563677B2Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 21, 2009·11 cites·8 claims
- 0681US6797561B2Method of fabricating a capacitor of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 28, 2004·26 cites·18 claims
- 0780US8241979B2Method of forming a vertical diode and method of manufacturing a semiconductor device using the samePARK SANG-JIN·Filed 2010·Granted Aug 14, 2012·4 cites·7 claims
- 0880US7410869B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 12, 2008·7 cites·14 claims
- 0973US8043974B2Semiconductor wet etchant and method of forming interconnection structure using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 25, 2011·4 cites·16 claims
- 1071US7736963B2Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 15, 2010·5 cites·17 claims
- 1168US7902059B2Methods of forming void-free layers in openings of semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 8, 2011·3 cites·23 claims
- 1268US7521375B2Method of forming an oxinitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·2 cites·23 claims
- 1366US7223657B2Methods of fabricating flash memory devices with floating gates that have reduced seamsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·3 cites·21 claims
- 1466US7077929B2Apparatus for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 18, 2006·8 cites·17 claims
- 1564US7189661B2Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 13, 2007·2 cites·14 claims
- 1664US7041558B2Floating gate memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 9, 2006·7 cites·19 claims
- 1764US6706613B2Methods for manufacturing stacked gates including oxide/nitride/oxide (ONO) interlayer dielectrics using pre-annealing and/or post-annealing in nitrogenSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 16, 2004·12 cites·29 claims
- 1859US2015191818A1Vertical furnaceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1952US7459364B2Methods of forming self-aligned floating gates using multi-etchingSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 2, 2008·4 cites·14 claims
- 2052US2008296644A1Cmos image sensors and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2149US2006223308A1Apparatus for manufacturing a semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2246US7629217B2Methods of forming void-free layers in openings of semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 8, 2009·0 cites·25 claims
- 2346US7160776B2Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 9, 2007·0 cites·18 claims
- 2446US6913979B2Method of manufacturing a metal oxide semiconductor transistorSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·2 cites·34 claims
- 2546US2015037030A1Optical Switching Devices Including Phase Transition MaterialsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2646US2008286957A1Method forming epitaxial silicon structureSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2745US2012009792A1Semiconductor wet etchant and method of forming interconnection structure using the samePARK JUNG-DAE·Filed 2011·Application pending·0 cites
- 2844US7297620B2Method of forming an oxide layer including increasing the temperature during oxidationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 20, 2007·0 cites·24 claims
- 2943US2005153518A1Method for forming capacitor using etching stopper film in semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 3042US2006270215A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3139US2005266640A1Method of forming a dielectric layer and method of manufacturing a nonvolatile memory device using the sameYOU YOUNG-SUB·Filed 2005·Application pending·0 cites
- 3239US2008305572A1Method of fabricating image device having capacitor and image device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3338US2005153513A1Method of forming a dielectric layer for a non-volatile memory cell and method of forming a non-volatile memory cell having the dielectric layerFiled 2004·Application pending·0 cites
- 3437US8617950B2Method of forming a capacitor and method of manufacturing a semiconductor device using the sameKUH BONG JIN·Filed 2012·Granted Dec 31, 2013·0 cites·20 claims
- 3529US2004061169A1Non-volatile memory device and method of manufacturing the sameFiled 2003·Application pending·0 cites
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