Inventor · disambiguated record
Oleg Gluschenkov
Also filed as: GLUSCHENKOV OLEG · GLUSCHENKOV OLEG G
257 granted patents·54 pending applications·3,537 citations·filing 2000–2024
99Inventor score
Top patents by PatentIndex Score
311 records- 0199US9773901B1Bottom spacer formation for vertical transistorIBM·Filed 2016·Granted Sep 26, 2017·43 cites·10 claims
- 0298US11227922B2Sloped epitaxy buried contactIBM·Filed 2020·Granted Jan 18, 2022·6 cites·21 claims
- 0398US9799736B1High acceptor level doping in silicon germaniumIBM·Filed 2016·Granted Oct 24, 2017·420 cites·12 claims
- 0498US8217423B2Structure and method for mobility enhanced MOSFETs with unalloyed silicideLIU YAOCHENG·Filed 2007·Granted Jul 10, 2012·97 cites·8 claims
- 0598US7015082B2High mobility CMOS circuitsIBM·Filed 2003·Granted Mar 21, 2006·159 cites·12 claims
- 0698US6977194B2Structure and method to improve channel mobility by gate electrode stress modificationIBM·Filed 2003·Granted Dec 20, 2005·225 cites·5 claims
- 0798US6891192B2Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regionsIBM·Filed 2003·Granted May 10, 2005·179 cites·11 claims
- 0897US11107968B1All-semiconductor Josephson junction device for qubit applicationsIBM·Filed 2020·Granted Aug 31, 2021·5 cites·20 claims
- 0997US9748359B1Vertical transistor bottom spacer formationIBM·Filed 2016·Granted Aug 29, 2017·18 cites·20 claims
- 1097US7247547B2Method of fabricating a field effect transistor having improved junctionsIBM·Filed 2005·Granted Jul 24, 2007·57 cites·13 claims
- 1197US7247534B2Silicon device on Si:C-OI and SGOI and method of manufactureIBM·Filed 2003·Granted Jul 24, 2007·95 cites·17 claims
- 1297US7198995B2Strained finFETs and method of manufactureIBM·Filed 2003·Granted Apr 3, 2007·154 cites·26 claims
- 1396US11139215B2Hybrid gate stack integration for stacked vertical transport field-effect transistorsIBM·Filed 2020·Granted Oct 5, 2021·3 cites·20 claims
- 1496US10777468B1Stacked vertical field-effect transistors with sacrificial layer patterningIBM·Filed 2019·Granted Sep 15, 2020·14 cites·20 claims
- 1596US10692768B1Vertical transport field-effect transistor architectureIBM·Filed 2019·Granted Jun 23, 2020·13 cites·20 claims
- 1696US10658180B1EUV pattern transfer with ion implantation and reduced impact of resist residueIBM·Filed 2018·Granted May 19, 2020·6 cites·18 claims
- 1796US9978750B1Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devicesIBM·Filed 2017·Granted May 22, 2018·11 cites·17 claims
- 1896US9972682B2Low resistance source drain contact formationIBM·Filed 2016·Granted May 15, 2018·13 cites·16 claims
- 1996US9748382B1Self aligned top extension formation for vertical transistorsIBM·Filed 2016·Granted Aug 29, 2017·13 cites·11 claims
- 2096US9679810B1Integrated circuit having improved electromigration performance and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·18 cites·15 claims
- 2196US9613870B2Gate stack formed with interrupted deposition processes and laser annealingIBM·Filed 2015·Granted Apr 4, 2017·13 cites·20 claims
- 2296US9613866B2Gate stack formed with interrupted deposition processes and laser annealingIBM·Filed 2016·Granted Apr 4, 2017·11 cites·13 claims
- 2396US9449921B1Voidless contact metal structuresIBM·Filed 2015·Granted Sep 20, 2016·17 cites·7 claims
- 2496US7394273B2On-chip electromigration monitoring systemIBM·Filed 2006·Granted Jul 1, 2008·31 cites·7 claims
- 2595US10079299B2Self aligned top extension formation for vertical transistorsIBM·Filed 2017·Granted Sep 18, 2018·8 cites·20 claims
- 2695US9954103B1Bottom spacer formation for vertical transistorIBM·Filed 2017·Granted Apr 24, 2018·11 cites·20 claims
- 2795US9941391B2Method of forming vertical transistor having dual bottom spacersIBM·Filed 2016·Granted Apr 10, 2018·8 cites·20 claims
- 2895US9917060B1Forming a contact for a semiconductor deviceIBM·Filed 2016·Granted Mar 13, 2018·11 cites·19 claims
- 2995US9570298B1Localized elastic strain relaxed bufferIBM·Filed 2015·Granted Feb 14, 2017·11 cites·12 claims
- 3095US9455185B1Laser anneal of buried metallic interconnects including through silicon viasIBM·Filed 2015·Granted Sep 27, 2016·16 cites·18 claims
- 3195US8237278B2Configurable interposerGLUSCHENKOV OLEG·Filed 2009·Granted Aug 7, 2012·29 cites·11 claims
- 3295US6720630B2Structure and method for MOSFET with metallic gate electrodeIBM·Filed 2001·Granted Apr 13, 2004·122 cites·21 claims
- 3394US6930060B2Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectricIBM·Filed 2003·Granted Aug 16, 2005·90 cites·20 claims
- 3493US8642434B2Structure and method for mobility enhanced MOSFETS with unalloyed silicideLIU YAOCHENG·Filed 2012·Granted Feb 4, 2014·14 cites·14 claims
- 3593US7585704B2Method of producing highly strained PECVD silicon nitride thin films at low temperatureIBM·Filed 2005·Granted Sep 8, 2009·28 cites·23 claims
- 3692US9911849B2Transistor and method of forming sameIBM·Filed 2015·Granted Mar 6, 2018·8 cites·11 claims
- 3792US9378952B1Tall relaxed high percentage silicon germanium fins on insulatorIBM·Filed 2015·Granted Jun 28, 2016·8 cites·20 claims
- 3892US7504700B2Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said methodIBM·Filed 2005·Granted Mar 17, 2009·26 cites·20 claims
- 3992US7291528B2Method of making strained semiconductor transistors having lattice-mismatched semiconductor regions underlying source and drain regionsIBM·Filed 2005·Granted Nov 6, 2007·16 cites·17 claims
- 4092US7279413B2High-temperature stable gate structure with metallic electrodeIBM·Filed 2004·Granted Oct 9, 2007·53 cites·13 claims
- 4192US7138685B2Vertical MOSFET SRAM cellIBM·Filed 2002·Granted Nov 21, 2006·54 cites·20 claims
- 4291US7176116B2High performance FET with laterally thin extensionIBM·Filed 2005·Granted Feb 13, 2007·17 cites·20 claims
- 4391US7030012B2Method for manufacturing tungsten/polysilicon word line structure in vertical DRAMIBM·Filed 2004·Granted Apr 18, 2006·49 cites·20 claims
- 4491US7002209B2MOSFET structure with high mechanical stress in the channelIBM·Filed 2004·Granted Feb 21, 2006·61 cites·20 claims
- 4590US11309216B2Large grain copper interconnect lines for MRAMIBM·Filed 2020·Granted Apr 19, 2022·3 cites·15 claims
- 4690US10068920B2Silicon germanium fins on insulator formed by lateral recrystallizationGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 4, 2018·6 cites·15 claims
- 4790US7719302B2On-chip electromigration monitoringIBM·Filed 2008·Granted May 18, 2010·16 cites·12 claims
- 4889US10361306B2High acceptor level doping in silicon germaniumIBM·Filed 2017·Granted Jul 23, 2019·4 cites·6 claims
- 4989US10262904B2Vertical transistor top epitaxy source/drain and contact structureIBM·Filed 2017·Granted Apr 16, 2019·5 cites·14 claims
- 5089US7521760B2Integrated circuit chip with FETs having mixed body thickness and method of manufacture thereofIBM·Filed 2007·Granted Apr 21, 2009·11 cites·11 claims
Showing the top 50 of 311 patent records by PatentIndex Score.
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