Inventor · disambiguated record

Ki-Hyung Ko

Also filed as: KO KI-HYUNG

9 granted patents·2 pending applications·39 citations·filing 2009–2022

85Inventor score

Technology areasH10D H10P H01L H10F H10W

Files withSAMSUNG ELECTRONICS CO LTD7 JEONG JI MIN1 KO KI-HYUNG1 KWON KEE SANG1 LEE JUNG-CHAN1

Top patents by PatentIndex Score

11 records

0191US8859371B2Method for manufacturing semiconductor device having dual gate dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 14, 2014·16 cites·23 claims
0284US10128236B2Semiconductor device and method for fabricating the sameJEONG JI MIN·Filed 2016·Granted Nov 13, 2018·6 cites·16 claims
0382US9748234B2Semiconductor devices and methods of fabricating the sameKWON KEE SANG·Filed 2015·Granted Aug 29, 2017·6 cites·18 claims
0479US10734380B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 4, 2020·2 cites·3 claims
0579US8168509B2Etching methods and methods of manufacturing a CMOS image sensor using the sameKO KI-HYUNG·Filed 2010·Granted May 1, 2012·4 cites·16 claims
0673US10115797B2Finfet semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 30, 2018·2 cites·16 claims
0770US10714472B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 14, 2020·1 cites·18 claims
0865US8617991B2Method of manufacturing semiconductor deviceLEE JUNG-CHAN·Filed 2012·Granted Dec 31, 2013·2 cites·20 claims
0957US12310055B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
1052US2018197861A1Semiconductor devices including varied depth recesses for contactsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
1148US2010178754A1Method of manufacturing cmos transistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →