Inventor · disambiguated record
Na Ren
Also filed as: REN NA · Ren na-na
7 granted patents·16 pending applications·11 citations·filing 2013–2024
75Inventor score
Files withREN NA8ZJU HANGZHOU GLOBAL SCIENTIFIC AND TECH INNOVATION CENTER4ZUO ZHENG3UNIV NANJING NORMAL2UNIV ZHEJIANG2
Top patents by PatentIndex Score
23 records- 0187US11983789B1Generation method, detection method, generation device, and detection device of zero watermarking for trajectory data, and storage mediumNANJING UNIVERSITY OF TECHNOLOGY·Filed 2024·Granted May 14, 2024·2 cites·10 claims
- 0283US10529867B1Schottky diode having double p-type epitaxial layers with high breakdown voltage and surge current capabilityREN NA·Filed 2018·Granted Jan 7, 2020·6 cites·14 claims
- 0381US12131401B1Dual watermarking method for trajectory data based on robust watermarking and fragile watermarkingUNIV NANJING NORMAL·Filed 2024·Granted Oct 29, 2024·1 cites·10 claims
- 0475US12014440B1Watermarking method for high-definition map based on invisible charactersUNIV NANJING NORMAL·Filed 2024·Granted Jun 18, 2024·1 cites·7 claims
- 0574US12174923B1Zero-watermarking method and device for BIM data, and mediumTHE THIRD SURVEYING AND MAPPING INST OF HUNAN PROVINCE·Filed 2024·Granted Dec 24, 2024·1 cites·9 claims
- 0652US2021098579A1Schottky diode with high breakdown voltage and surge current capability using double p-type epitaxial layersREN NA·Filed 2020·Application pending·0 cites
- 0750US2023268448A1Fast-Turn-On Floating Island Device and Method for Manufacturing ThereofUNIV ZHEJIANG·Filed 2022·Application pending·0 cites
- 0849US11658237B2Trench-gate power MOSFET with optimized layoutZJU HANGZHOU GLOBAL SCIENTIFIC AND TECH INNOVATION CENTER·Filed 2022·Granted May 23, 2023·0 cites·19 claims
- 0948US2020027953A1Schottky diode with high breakdown voltage and surge current capability using double p-type epitaxial layersREN NA·Filed 2019·Application pending·0 cites
- 1047US2023130726A1Silicon Carbide Trench Gate MOSFET and Method for Manufacturing ThereofZJU HANGZHOU GLOBAL SCIENTIFIC AND TECH INNOVATION CENTER·Filed 2022·Application pending·0 cites
- 1146US2023072827A1Trench gate silicon carbide mosfet with high reliabilityZJU HANGZHOU GLOBAL SCIENTIFIC AND TECH INNOVATION CENTER·Filed 2022·Application pending·0 cites
- 1244US10672883B2Mixed trench junction barrier Schottky diode and method fabricating sameREN NA·Filed 2018·Granted Jun 2, 2020·0 cites·17 claims
- 1342US2023039141A1Trench-gate mosfet with electric field shielding regionZJU HANGZHOU GLOBAL SCIENTIFIC AND TECH INNOVATION CENTER·Filed 2021·Application pending·0 cites
- 1441US2014072818A1Epoxy resin composition, and prepreg and copper clad laminate made therefromGUANGDONG SHENGYI SCI TECH CO·Filed 2013·Application pending·0 cites
- 1540US2021305422A1Sillicon carbide power mosfet with enhanced body diodeUNIV ZHEJIANG·Filed 2021·Application pending·0 cites
- 1638US2020321478A1Trench junction barrier schottky diode with voltage reducing layer and manufacturing method thereofREN NA·Filed 2019·Application pending·0 cites
- 1737US2020321477A1Multi-schottky-layer trench junction barrier schottky diode and manufacturing method thereofREN NA·Filed 2019·Application pending·0 cites
- 1836US2021028167A1Analog integrated circuit with improved transistor lifetime and method for manufacturing the sameZUO ZHENG·Filed 2020·Application pending·0 cites
- 1935US2020266292A1Composite substrates of conductive and insulating or semi-insulating silicon carbide for gallium nitride devicesLI RUIGANG·Filed 2019·Application pending·0 cites
- 2035US2020019063A1Method for nickel etchingZUO ZHENG·Filed 2019·Application pending·0 cites
- 2134US2018358478A1Trench type junction barrier schottky diode with voltage reducing layer and manufacturing method thereofREN NA·Filed 2018·Application pending·0 cites
- 2234US2018358477A1Trench type junction barrier schottky diode and manufacturing method thereofREN NA·Filed 2018·Application pending·0 cites
- 2332US2020194583A1Metal source ldmos semiconductor device and manufacturing method thereofZUO ZHENG·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →