Inventor · disambiguated record
Tzer-Min Shen
Also filed as: SHEN TZER-MIN
43 granted patents·19 pending applications·78 citations·filing 2005–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD51UNITED MICROELECTRONICS CORP5TAIWAN SEMICONDUCTOR MFG2DHANYAKUMAR MAHAVEER SATHAIYA1GOTO KEN-ICHI1
Top patents by PatentIndex Score
62 records- 0194US11527622B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
- 0293US11990522B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·2 cites·20 claims
- 0393US11894461B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 0492US11942134B2Memory circuit and write methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·1 cites·20 claims
- 0591US12040372B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
- 0691US7342284B2Semiconductor MOS transistor device and method for making the sameUNITED MICROELECTRONICS CORP·Filed 2006·Granted Mar 11, 2008·16 cites·25 claims
- 0790US11855192B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 0890US11476333B2Dual channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·2 cites·20 claims
- 0990US10535680B2Integrated circuit structure and method with hybrid orientation for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·5 cites·19 claims
- 1090US8866235B2Source and drain dislocation fabrication in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Oct 21, 2014·10 cites·19 claims
- 1189US11728391B22d-channel transistor structure with source-drain engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 1287US11508427B2Memory circuit and write methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·2 cites·20 claims
- 1387US2025366075A1Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1486US12136570B2Graphene layer for low resistance contacts and damascene interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·1 cites·20 claims
- 1586US2025351481A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1685US9455346B2Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 27, 2016·5 cites·20 claims
- 1785US7618856B2Method for fabricating strained-silicon CMOS transistorsUNITED MICROELECTRONICS CORP·Filed 2006·Granted Nov 17, 2009·13 cites·21 claims
- 1885US2025366005A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1983US11489057B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 1, 2022·1 cites·20 claims
- 2082US12382691B2Effective work function tuning via silicide induced interface dipole modulation for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 2182US11843032B2Semiconductor device structure with channel and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·1 cites·20 claims
- 2280US12288722B2Spacer structure for semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 2380US2025366002A1Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2480US2025063778A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2579US12477784B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 2679US12300721B2Semiconductor device structure with channel and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2778US2025267910A1Semiconductor device structure with channel and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2878US2025261436A1Spacer structure for semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2977US2024332393A1Contact Structures In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3076US12218205B22D-channel transistor structure with source-drain engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 3174US12166074B2Gate structure in semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 3274US9263345B2SOI transistors with improved source/drain structures with enhanced strainGOTO KEN-ICHI·Filed 2012·Granted Feb 16, 2016·4 cites·20 claims
- 3374US2025280604A1Integrated Circuit Structure and Method with Hybrid Orientation for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3474US2024097011A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3573US12302640B2Integrated circuit structure and method with hybrid orientation for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 3673US2024395627A1Graphene layer for low resistance contacts and damascene interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3773US2024371939A1Dual channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3872US11735594B2Integrated circuit structure and method with hybrid orientation for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 3972US10879238B2Negative capacitance finFET and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 4072US2024233795A1Memory circuit and write methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4171US2025248046A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4271US2025185326A12D-Channel Transistor Structure with Source-Drain EngineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4370US12087819B2Dual channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 4470US11545397B2Spacer structure for semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 4570US10276717B2Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 30, 2019·1 cites·20 claims
- 4669US12289893B2Semiconductor devices including FTJ structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 4769US2023378305A1Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4868US12426292B2Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 4968US11031418B2Integrated circuit structure and method with hybrid orientation for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·20 claims
- 5066US11810960B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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