Inventor · disambiguated record
David Grider
Also filed as: GRIDER DAVID · GRIDER DAVID E
11 granted patents·450 citations·filing 1992–2013
92Inventor score
Top patents by PatentIndex Score
11 records- 0197US7514759B1Piezoelectric MEMS integration with GaN technologyHRL LAB LLC·Filed 2005·Granted Apr 7, 2009·125 cites·32 claims
- 0295US7408182B1Surface passivation of GaN devices in epitaxial growth chamberRF MICRO DEVICES INC·Filed 2006·Granted Aug 5, 2008·36 cites·14 claims
- 0395US7033961B1Epitaxy/substrate release layerRF MICRO DEVICES INC·Filed 2003·Granted Apr 25, 2006·116 cites·25 claims
- 0493US7968391B1High voltage GaN-based transistor structureRF MICRO DEVICES INC·Filed 2007·Granted Jun 28, 2011·25 cites·11 claims
- 0593US7459356B1High voltage GaN-based transistor structureRF MICRO DEVICES INC·Filed 2006·Granted Dec 2, 2008·25 cites·11 claims
- 0693US7052942B1Surface passivation of GaN devices in epitaxial growth chamberRF MICRO DEVICES INC·Filed 2003·Granted May 30, 2006·66 cites·17 claims
- 0790US7026665B1High voltage GaN-based transistor structureRF MICRO DEVICES INC·Filed 2003·Granted Apr 11, 2006·48 cites·19 claims
- 0865US9184237B2Vertical power transistor with built-in gate bufferCREE INC·Filed 2013·Granted Nov 10, 2015·2 cites·15 claims
- 0959US6830945B2Method for fabricating a non-planar nitride-based heterostructure field effect transistorHRL LAB LLC·Filed 2003·Granted Dec 14, 2004·5 cites·44 claims
- 1048US7247893B2Non-planar nitride-based heterostructure field effect transistorHRL LAB LLC·Filed 2004·Granted Jul 24, 2007·1 cites·15 claims
- 1129US5298772AIntegrated heterostructure acoustic charge transport (HACT) and heterostructure insulated gate field effects transistor (HIGFET) devicesHONEYWELL INC·Filed 1992·Granted Mar 29, 1994·1 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →