Inventor · disambiguated record
Scott B. Clendenning
Also filed as: CLENDENNING SCOTT · CLENDENNING SCOTT B · CLENDENNING SCOTT BRUCE
48 granted patents·64 pending applications·322 citations·filing 2006–2024
97Inventor score
Top patents by PatentIndex Score
112 records- 0198US8890264B2Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interfaceDEWEY GILBERT·Filed 2012·Granted Nov 18, 2014·95 cites·13 claims
- 0297US9236292B2Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)ROMERO PATRICIO E·Filed 2013·Granted Jan 12, 2016·125 cites·9 claims
- 0396US11264449B2Capacitor architectures in semiconductor devicesINTEL CORP·Filed 2020·Granted Mar 1, 2022·5 cites·20 claims
- 0493US9793061B2Energy storage device, method of manufacturing same, and mobile electronic device containing sameINTEL CORP·Filed 2016·Granted Oct 17, 2017·5 cites·20 claims
- 0593US7964490B2Methods of forming nickel sulfide film on a semiconductor deviceINTEL CORP·Filed 2008·Granted Jun 21, 2011·19 cites·28 claims
- 0690US9932671B2Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)INTEL CORP·Filed 2014·Granted Apr 3, 2018·10 cites·8 claims
- 0790US9583389B2Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)ROMERO PATRICIO E·Filed 2015·Granted Feb 28, 2017·7 cites·11 claims
- 0888US9530733B2Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regionsINTEL CORP·Filed 2013·Granted Dec 27, 2016·8 cites·20 claims
- 0986US10497613B2Microelectronic conductive routes and methods of making the sameINTEL CORP·Filed 2015·Granted Dec 3, 2019·5 cites·14 claims
- 1085US12394716B2Integrated circuit interconnect structures with graphene capINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 1185US9449765B2Energy storage device, method of manufacturing same, and mobile electronic device containing sameGARDNER DONALD S·Filed 2012·Granted Sep 20, 2016·4 cites·26 claims
- 1284US12396254B2Stacked 2D CMOS with inter metal layersINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 1384US11869889B2Self-aligned gate endcap (SAGE) architectures without fin end gapINTEL CORP·Filed 2019·Granted Jan 9, 2024·4 cites·22 claims
- 1484US9090964B2Additives to improve the performance of a precursor source for cobalt depositionINTEL CORP·Filed 2013·Granted Jul 28, 2015·2 cites·26 claims
- 1583US10720508B2Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride cappingINTEL CORP·Filed 2015·Granted Jul 21, 2020·3 cites·15 claims
- 1682US12342551B2Capacitor architectures in semiconductor devicesINTEL CORP·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 1782US9786559B2Process and material for preventing deleterious expansion of high aspect ratio copper filled through silicon vias (TSVs)INTEL CORP·Filed 2016·Granted Oct 10, 2017·3 cites·12 claims
- 1880US10396176B2Selective gate spacers for semiconductor devicesINTEL CORP·Filed 2014·Granted Aug 27, 2019·3 cites·23 claims
- 1980US10243080B2Selective deposition utilizing sacrificial blocking layers for semiconductor devicesINTEL CORP·Filed 2014·Granted Mar 26, 2019·3 cites·20 claims
- 2080US9818847B2Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interfaceINTEL CORP·Filed 2014·Granted Nov 14, 2017·3 cites·8 claims
- 2179US10658487B2Semiconductor devices having ruthenium phosphorus thin filmsINTEL CORP·Filed 2015·Granted May 19, 2020·1 cites·19 claims
- 2278US9390932B2Electropositive metal containing layers for semiconductor applicationsINTEL CORP·Filed 2015·Granted Jul 12, 2016·2 cites·26 claims
- 2377US10971600B2Selective gate spacers for semiconductor devicesINTEL CORP·Filed 2019·Granted Apr 6, 2021·1 cites·16 claims
- 2474US11791375B2Capacitor architectures in semiconductor devicesINTEL CORP·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 2573US11901404B2Capacitor architectures in semiconductor devicesINTEL CORP·Filed 2022·Granted Feb 13, 2024·0 cites·17 claims
- 2673US11672133B2Vertically stacked memory elements with air gapINTEL CORP·Filed 2019·Granted Jun 6, 2023·1 cites·19 claims
- 2773US9455150B2Conformal thin film deposition of electropositive metal alloy filmsINTEL CORP·Filed 2013·Granted Sep 27, 2016·3 cites·13 claims
- 2872US11532724B2Selective gate spacers for semiconductor devicesINTEL CORP·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 2972US2025133822A1Ribbon or wire transistor stack with selective dipole threshold voltage shifterINTEL CORP·Filed 2024·Application pending·0 cites
- 3071US8952355B2Electropositive metal containing layers for semiconductor applicationsROMERO PATRICIO E·Filed 2011·Granted Feb 10, 2015·2 cites·20 claims
- 3170US9385033B2Method of forming a metal from a cobalt metal precursorBLACKWELL JAMES M·Filed 2013·Granted Jul 5, 2016·3 cites·10 claims
- 3268US2024088143A1Self-aligned gate endcap (sage) architectures without fin end gapINTEL CORP·Filed 2023·Application pending·0 cites
- 3367US8440556B2Forming conformal metallic platinum zinc films for semiconductor devicesCLENDENNING SCOTT BRUCE·Filed 2010·Granted May 14, 2013·3 cites·17 claims
- 3466US10998423B2Fabrication of multi-channel nanowire devices with self-aligned internal spacers and SOI FinFETs using selective silicon nitride cappingINTEL CORP·Filed 2020·Granted May 4, 2021·0 cites·22 claims
- 3564US10777366B2Method of increasing an energy density and an achievable power output of an energy storage deviceINTEL CORP·Filed 2018·Granted Sep 15, 2020·0 cites·7 claims
- 3660US12369382B2Integrated circuit structures with graphene contactsINTEL CORP·Filed 2021·Granted Jul 22, 2025·0 cites·25 claims
- 3760US10756215B2Selective deposition utilizing sacrificial blocking layers for semiconductor devicesINTEL CORP·Filed 2019·Granted Aug 25, 2020·0 cites·19 claims
- 3859US12183739B2Ribbon or wire transistor stack with selective dipole threshold voltage shifterINTEL CORP·Filed 2020·Granted Dec 31, 2024·0 cites·21 claims
- 3959US2025393290A1Ferroelectric field effect transistors (fefets) with relaxor ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 4057US2025311376A1Coupled multi-layer magnetoelectric, ferroelectric, and ferromagnetic structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 4157US2025112155A1Conformal coatings with spatially defined surface energies for die-to-wafer self-alignment assisted assemblyINTEL CORP·Filed 2023·Application pending·0 cites
- 4256US2023411443A1Metal insulator metal (mim) capacitor architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 4356US2025311636A1Magnetoelectric spin–orbit (meso) device with unconventional spin-to-charge conversionINTEL CORP·Filed 2024·Application pending·0 cites
- 4456US2025008852A1Two-terminal ferroelectric perovskite diode memory elementINTEL CORP·Filed 2023·Application pending·0 cites
- 4556US2025221318A1Magnetoelectric spin–orbit (meso) device with antiferromagnetic spin injection and spin absorption for increased output voltageINTEL CORP·Filed 2023·Application pending·0 cites
- 4656US2025311639A1Spin-to-charge conversion using extrinsic spin hall effect and orbital hall effectINTEL CORP·Filed 2024·Application pending·0 cites
- 4755US2024429301A1Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowthINTEL CORP·Filed 2023·Application pending·0 cites
- 4855US2024201586A1Precursors and methods for producing tin-based photoresistINTEL CORP·Filed 2022·Application pending·0 cites
- 4955US2025113572A1Method of fabricating a 2d channel transistor by employing selective metallization to form a source or drain structureINTEL CORP·Filed 2023·Application pending·0 cites
- 5054US12500162B2Staggered vertically spaced integrated circuit line metallization with differential vias and metal-selective depositionINTEL CORP·Filed 2021·Granted Dec 16, 2025·0 cites·12 claims
Showing the top 50 of 112 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →