Inventor · disambiguated record
In-Sang Jeon
Also filed as: JEON IN SANG
11 granted patents·8 pending applications·3,545 citations·filing 1999–2024
94Inventor score
Top patents by PatentIndex Score
19 records- 0198US6590251B2Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 8, 2003·627 cites·13 claims
- 0298US6478872B1Method of delivering gas into reaction chamber and shower head used to deliver gasSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 12, 2002·814 cites·13 claims
- 0398US6399491B2Method of manufacturing a barrier metal layer using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 4, 2002·342 cites·11 claims
- 0498US6348376B2Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 19, 2002·254 cites·11 claims
- 0598US6287965B1Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 11, 2001·1.3k cites·23 claims
- 0697US6458701B1Method for forming metal layer of semiconductor device using metal halide gasSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 1, 2002·238 cites·10 claims
- 0794US12308680B1Portable charging devices with multi-charging functionsSPIGEN KOREA CO LTD·Filed 2024·Granted May 20, 2025·3 cites·17 claims
- 0877US8168521B2Methods of manufacturing semiconductor devices having low resistance buried gate structuresJEON IN-SANG·Filed 2010·Granted May 1, 2012·7 cites·12 claims
- 0974US8748254B2Method of manufacturing semiconductor deviceLEE KWANG-WOOK·Filed 2012·Granted Jun 10, 2014·4 cites·19 claims
- 1070US7692196B2Memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 6, 2010·4 cites·18 claims
- 1159US9230922B2Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 5, 2016·0 cites·17 claims
- 1246US2008116530A1Semiconductor Devices Having Transistors with Different Gate Structures and Related MethodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1345US2003000473A1Method of delivering gas into reaction chamber and shower head used to deliver gasFiled 2002·Application pending·0 cites
- 1442US2012153796A1Storage container and refrigerator having the sameHAN JEONG SU·Filed 2011·Application pending·0 cites
- 1540US2007063295A1Gate electrode, method of forming the same, transistor having the gate electrode, method of manufacturing the same, semiconductor device having the gate electrode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1640US2002081844A1Method of manufacturing a barrier metal layer using atomic layer depositionFiled 2002·Application pending·0 cites
- 1737US2009134448A1Non-volatile memory device and method of forming the sameJEON TAEK-SOO·Filed 2008·Application pending·0 cites
- 1837US2007032008A1MOS semiconductor devices having polysilicon gate electrodes and high dielectric constant gate dielectric layers and methods of manufacturing such devicesKIM HYE-MIN·Filed 2006·Application pending·0 cites
- 1935US2010213541A1Semiconductor device having recess channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →