Inventor · disambiguated record
Hideyoshi Horie
Also filed as: HORIE HIDEYOSHI
31 granted patents·13 pending applications·332 citations·filing 1994–2024
97Inventor score
Files withMITSUBISHI CHEM CORP20CITIZEN ELECTRONICS14HORIE HIDEYOSHI6CITIZEN ELECTRONICS COMPANY LTD2KANAGAWA KAGAKU GIJUTSU AKAD1
Top patents by PatentIndex Score
44 records- 0193US9490399B2Illumination method and light-emitting deviceCITIZEN ELECTRONICS·Filed 2015·Granted Nov 8, 2016·7 cites·4 claims
- 0292US9818914B2Illumination method and light-emitting deviceCITIZEN ELECTRONICS·Filed 2016·Granted Nov 14, 2017·7 cites·18 claims
- 0392US9722150B2Illumination method and light-emitting deviceCITIZEN ELECTRONICS·Filed 2016·Granted Aug 1, 2017·7 cites·18 claims
- 0491US8652948B2Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting elementHORIE HIDEYOSHI·Filed 2008·Granted Feb 18, 2014·23 cites·22 claims
- 0590US9373757B2Illumination method and light-emitting deviceCITIZEN ELECTRONICS COMPANY LTD·Filed 2014·Granted Jun 21, 2016·12 cites·88 claims
- 0690US9305970B2Illumination method and light-emitting deviceCITIZEN ELECTRONICS COMPANY LTD·Filed 2014·Granted Apr 5, 2016·12 cites·88 claims
- 0788US11450789B2Illumination method using a light-emitting deviceCITIZEN ELECTRONICS·Filed 2016·Granted Sep 20, 2022·4 cites·10 claims
- 0887US9478714B2Illumination method and light-emitting deviceCITIZEN ELECTRONICS·Filed 2015·Granted Oct 25, 2016·4 cites·4 claims
- 0986US6791181B2Semiconductor light emitting deviceMITSUBISHI CHEM CORP·Filed 2001·Granted Sep 14, 2004·30 cites·16 claims
- 1083US8624220B2Nitride semiconductorHORIE HIDEYOSHI·Filed 2011·Granted Jan 7, 2014·5 cites·24 claims
- 1179US9755118B2Light-emitting device, method for designing light-emitting device, method for driving light-emitting device, illumination method, and method for manufacturing light-emitting deviceCITIZEN ELECTRONICS·Filed 2016·Granted Sep 5, 2017·2 cites·39 claims
- 1278US9530821B2Light-emitting device, method for designing light-emitting device, method for driving light-emitting device, illumination method, and method for manufacturing light-emitting deviceCITIZEN ELECTRONICS·Filed 2015·Granted Dec 27, 2016·2 cites·16 claims
- 1377US6323052B1Compound semiconductor light emitting device and method of fabricating the sameMITSUBISHI CHEM CORP·Filed 1998·Granted Nov 27, 2001·58 cites·17 claims
- 1476US6744074B2Compound semiconductor light emitting device and method of fabricating the sameMITSUBISHI CHEM CORP·Filed 2001·Granted Jun 1, 2004·25 cites·11 claims
- 1573US5619518ASemiconductor laser diodeMITSUBISHI CHEM CORP·Filed 1994·Granted Apr 8, 1997·32 cites·21 claims
- 1670US8581274B2Integrated semiconductor light-emitting device and its manufacturing methodHORIE HIDEYOSHI·Filed 2007·Granted Nov 12, 2013·5 cites·11 claims
- 1767US2025281781A1Quenching device, hydrogen production device, hydrogen production method and reactor for photochemical reactionMITSUBISHI CHEM CORP·Filed 2024·Application pending·0 cites
- 1865US2024375043A1Composite separation structureMITSUBISHI CHEM CORP·Filed 2024·Application pending·0 cites
- 1962US10355177B2Illumination method and light-emitting deviceCITIZEN ELECTRONICS·Filed 2018·Granted Jul 16, 2019·0 cites·16 claims
- 2060US10236424B2Illumination method and light-emitting deviceCITIZEN ELECTRONICS·Filed 2018·Granted Mar 19, 2019·0 cites·16 claims
- 2160US9997677B2Illumination method and light-emitting deviceCITIZEN ELECTRONICS·Filed 2017·Granted Jun 12, 2018·0 cites·11 claims
- 2260US9954149B2Illumination method and light-emitting deviceCITIZEN ELECTRONICS·Filed 2017·Granted Apr 24, 2018·0 cites·11 claims
- 2360US7792170B2Semiconductor laserMITSUBISHI CHEM CORP·Filed 2005·Granted Sep 7, 2010·1 cites·43 claims
- 2460US5838028ASemiconductor device having a ridge or grooveMITSUBISHI CHEM CORP·Filed 1997·Granted Nov 17, 1998·25 cites·4 claims
- 2559US10930823B2Light-emitting device, method for designing light-emitting device, method for driving light-emitting device, illumination method, and method for manufacturing light-emitting deviceCITIZEN ELECTRONICS·Filed 2018·Granted Feb 23, 2021·0 cites·34 claims
- 2659US2022393081A1Light-emitting device and method for designing light emitting deviceCITIZEN ELECTRONICS·Filed 2022·Application pending·0 cites
- 2758US6677618B1Compound semiconductor light emitting deviceMITSUBISHI CHEM CORP·Filed 1999·Granted Jan 13, 2004·24 cites·28 claims
- 2857US9997678B2Light-emitting device, method for designing light-emitting device, method for driving light-emitting device, illumination method, and method for manufacturing light-emitting deviceCITIZEN ELECTRONICS·Filed 2017·Granted Jun 12, 2018·0 cites·80 claims
- 2957US6172998B1Semiconductor laser diodeMITSUBISHI CHEM CORP·Filed 1997·Granted Jan 9, 2001·20 cites·10 claims
- 3054US9711681B2Nitride semiconductorMITSUBISHI CHEM CORP·Filed 2015·Granted Jul 18, 2017·0 cites·14 claims
- 3154US9048100B2Nitride semiconductor and nitride semiconductor crystal growth methodHORIE HIDEYOSHI·Filed 2008·Granted Jun 2, 2015·0 cites·11 claims
- 3254US2014073118A1Nitride semiconductorMITSUBISHI CHEM CORP·Filed 2013·Application pending·0 cites
- 3352US2014318441A1Nitride semiconductor and nitride semiconductor crystal growth methodHORIE HIDEYOSHI·Filed 2014·Application pending·0 cites
- 3450US5920767AMethod of forming a groove in a semiconductor laser diode and a semiconductor laser diodeMITSUBISHI CHEMICAL COMPANY·Filed 1996·Granted Jul 6, 1999·14 cites·2 claims
- 3548US5566198AMethod of forming a groove in a semiconductor laser diode and a semiconductor laser diodeMITSUBISHI CHEM CORP·Filed 1995·Granted Oct 15, 1996·13 cites·10 claims
- 3646US2010304570A1Etching method and method for manufacturing optical/electronic device using the sameMITSUBISHI CHEM CORP·Filed 2008·Application pending·0 cites
- 3745US7977682B2Light emitting deviceMITSUBISHI CHEM CORP·Filed 2007·Granted Jul 12, 2011·0 cites·20 claims
- 3845US2010155899A1Etching method, etching mask and method for manufacturing semiconductor device using the sameMITSUBISHI CHEM CORP·Filed 2007·Application pending·0 cites
- 3945US2010163931A1Group iii-v nitride layer and method for producing the sameKANAGAWA KAGAKU GIJUTSU AKAD·Filed 2007·Application pending·0 cites
- 4044US2009315045A1Integrated semiconductor light emitting device and method for manufacturing sameMITSUBISHI CHEM CORP·Filed 2007·Application pending·0 cites
- 4144US2010308357A1Semiconductor light emitting element and method for manufacturing the sameMITSUBISHI CHEM CORP·Filed 2008·Application pending·0 cites
- 4243US2009200568A1Semiconductor light-emitting deviceHORIE HIDEYOSHI·Filed 2007·Application pending·0 cites
- 4340US2005201439A1Semiconductor light emitting device and semiconductor light emitting device moduleMITSUBISHI CHEM CORP·Filed 2005·Application pending·0 cites
- 4439US2009026488A1Nitride semiconductor material and production process of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →