Inventor · disambiguated record
Winfried Kaindl
Also filed as: KAINDL WINFRIED
20 granted patents·8 pending applications·28 citations·filing 2007–2025
91Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG14INFINEON TECHNOLOGIES AUSTRIA10MAUDER ANTON2INFINEON TECH DRESDEN GMBH & CO KG1WILLMEROTH ARMIN1
Top patents by PatentIndex Score
28 records- 0188US11211483B2Method for forming an insulation layer in a semiconductor body and transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 28, 2021·4 cites·23 claims
- 0283US8975136B2Manufacturing a super junction semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Mar 10, 2015·4 cites·16 claims
- 0381US9070580B2Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradientINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Jun 30, 2015·6 cites·12 claims
- 0480US9349792B2Super junction semiconductor device having columnar super junction regionsINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted May 24, 2016·2 cites·14 claims
- 0580US9029944B2Super junction semiconductor device comprising implanted zonesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 12, 2015·5 cites·16 claims
- 0675US2025226820A1Method for operating a power transistor circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 0774US10374056B2Latch-up resistant transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Aug 6, 2019·2 cites·20 claims
- 0872US12273098B2Method for operating a power transistor circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Apr 8, 2025·0 cites·18 claims
- 0969US7977737B2Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitanceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Jul 12, 2011·4 cites·13 claims
- 1065US11869966B2Method for forming an insulation layer in a semiconductor body and transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jan 9, 2024·0 cites·13 claims
- 1164US9524966B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Dec 20, 2016·1 cites·14 claims
- 1263US2025113578A1Method for forming electrodes, semiconductor device and semiconductor waferINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1363US2025113569A1Transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1461US2025113534A1Method for producing a transistor device and transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1557US7982253B2Semiconductor device with a dynamic gate-drain capacitanceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Jul 19, 2011·0 cites·13 claims
- 1655US10943987B2Latch-up resistant transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 1755US9722020B2Super junction semiconductor device having columnar super junction regions extending into a drift layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Aug 1, 2017·0 cites·13 claims
- 1855US8829584B2Semiconductor device with a dynamic gate-drain capacitanceMAUDER ANTON·Filed 2012·Granted Sep 9, 2014·0 cites·3 claims
- 1954US9899510B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Feb 20, 2018·0 cites·19 claims
- 2052US8273622B2Semiconductor with a dynamic gate-drain capacitanceMAUDER ANTON·Filed 2011·Granted Sep 25, 2012·0 cites·9 claims
- 2148US11374125B2Vertical transistor device having a discharge region comprising at least one lower dose section and located at least partially below a gate electrode padINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jun 28, 2022·0 cites·15 claims
- 2248US2009159927A1Integrated circuit device and method for its productionINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Application pending·0 cites
- 2347US11508841B2Semiconductor deviceINFINEON TECH DRESDEN GMBH & CO KG·Filed 2020·Granted Nov 22, 2022·0 cites·21 claims
- 2445US8294206B2Integrated circuit device and method for its productionWILLMEROTH ARMIN·Filed 2011·Granted Oct 23, 2012·0 cites·12 claims
- 2543US2009321818A1Semiconductor component with two-stage body zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Application pending·0 cites
- 2643US2015115358A1Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Application pending·0 cites
- 2742US2009184373A1Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Application pending·0 cites
- 2832US10256325B2Radiation-hardened power semiconductor devices and methods of forming themINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2012·Granted Apr 9, 2019·0 cites·10 claims
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