Inventor · disambiguated record
Te-Yin Hsia
Also filed as: HSIA TE-YIN
3 granted patents·1 pending application·11 citations·filing 2006–2022
60Inventor score
Technology areasH10D
Top patents by PatentIndex Score
4 records- 0179US7521741B2Shielding structures for preventing leakages in high voltage MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 21, 2009·9 cites·20 claims
- 0260US2022367614A1Avalanche-protected transistors using a bottom breakdown current path and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 0356US11437466B2Avalanche-protected transistors using a bottom breakdown current path and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 0451US8004038B2Suppression of hot-carrier effects using double well for thin gate oxide LDMOS embedded in HV processTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 23, 2011·2 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →