Inventor · disambiguated record
Katsuya Nishiyama
Also filed as: NISHIYAMA KATSUYA
59 granted patents·6 pending applications·666 citations·filing 2002–2024
98Inventor score
Top patents by PatentIndex Score
65 records- 0198US7596015B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2007·Granted Sep 29, 2009·94 cites·23 claims
- 0296US6765824B2Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memoryTOSHIBA KK·Filed 2003·Granted Jul 20, 2004·127 cites·20 claims
- 0394US8305801B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2011·Granted Nov 6, 2012·17 cites·18 claims
- 0494US8299552B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2008·Granted Oct 30, 2012·33 cites·18 claims
- 0593US8750029B2Magnetoresistive effect element and magnetic memoryKITAGAWA EIJI·Filed 2011·Granted Jun 10, 2014·14 cites·20 claims
- 0693US8107281B2Magnetoresistive element and magnetic memoryKAI TADASHI·Filed 2010·Granted Jan 31, 2012·23 cites·12 claims
- 0793US8098514B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2008·Granted Jan 17, 2012·49 cites·24 claims
- 0892US8218355B2Magnetoresistive element and magnetic memoryKITAGAWA EIJI·Filed 2009·Granted Jul 10, 2012·23 cites·25 claims
- 0991US8670268B2Magnetoresistive element and magnetic memory using the sameNAGASE TOSHIHIKO·Filed 2012·Granted Mar 11, 2014·9 cites·18 claims
- 1090US7483291B2Magneto-resistance effect element, magnetic memory and magnetic headTOSHIBA KK·Filed 2005·Granted Jan 27, 2009·16 cites·23 claims
- 1189US8659103B2Magnetoresistive element and magnetic memory using the sameWATANABE DAISUKE·Filed 2012·Granted Feb 25, 2014·10 cites·18 claims
- 1289US8208292B2Magnetoresistive element and magnetic memoryKAI TADASHI·Filed 2012·Granted Jun 26, 2012·13 cites·15 claims
- 1388US8895162B2Magnetoresistive element and magnetic memoryNISHIYAMA KATSUYA·Filed 2011·Granted Nov 25, 2014·13 cites·7 claims
- 1487US8946837B2Semiconductor storage device with magnetoresistive elementTOSHIBA KK·Filed 2014·Granted Feb 3, 2015·8 cites·19 claims
- 1587US6879475B2Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic headTOSHIBA KK·Filed 2002·Granted Apr 12, 2005·18 cites·31 claims
- 1686US9178137B2Magnetoresistive element and magnetic memoryEEH YOUNGMIN·Filed 2013·Granted Nov 3, 2015·8 cites·12 claims
- 1786US6717845B2Magnetic memoryTOSHIBA KK·Filed 2003·Granted Apr 6, 2004·33 cites·27 claims
- 1885US8686521B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2010·Granted Apr 1, 2014·7 cites·18 claims
- 1985US8665639B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2012·Granted Mar 4, 2014·7 cites·20 claims
- 2084US8953369B2Magnetoresistive element and magnetic memory using the sameTOSHIBA KK·Filed 2014·Granted Feb 10, 2015·4 cites·18 claims
- 2183US8547737B2Magnetoresistive element and magnetic memoryDAIBOU TADAOMI·Filed 2012·Granted Oct 1, 2013·5 cites·18 claims
- 2282US8705269B2Magnetoresistive element and magnetic memoryNAGASE TOSHIHIKO·Filed 2011·Granted Apr 22, 2014·6 cites·18 claims
- 2382US6826078B2Magnetoresistive effect element and magnetic memory having the sameTOSHIBA KK·Filed 2003·Granted Nov 30, 2004·18 cites·12 claims
- 2481US8669628B2Magnetoresistive element and magnetic memory using the sameUEDA KOJI·Filed 2012·Granted Mar 11, 2014·5 cites·14 claims
- 2581US8502331B2Magnetoresistive effect element, magnetic memoryKITAGAWA EIJI·Filed 2011·Granted Aug 6, 2013·5 cites·14 claims
- 2679US8982614B2Magnetoresistive effect element and manufacturing method thereofTOSHIBA KK·Filed 2013·Granted Mar 17, 2015·3 cites·11 claims
- 2779US8169817B2Magnetoresistive device and magnetic random access memoryNAKAYAMA MASAHIKO·Filed 2010·Granted May 1, 2012·5 cites·11 claims
- 2879US8143684B2Magnetoresistive elementNAGAMINE MAKOTO·Filed 2011·Granted Mar 27, 2012·5 cites·5 claims
- 2978US10236077B2Screening method for magnetic storage device, screening apparatus for magnetic storage device, and manufacturing method of magnetic storage deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Mar 19, 2019·2 cites·20 claims
- 3078US9196823B2Magnetoresistive effect elementTOSHIBA KK·Filed 2013·Granted Nov 24, 2015·6 cites·16 claims
- 3178US8750030B2Magnetoresistive element and magnetic random access memoryUEDA KOJI·Filed 2011·Granted Jun 10, 2014·4 cites·9 claims
- 3278US6956765B2Magneto-resistance effect element, magnetic memory and magnetic headTOSHIBA KK·Filed 2003·Granted Oct 18, 2005·22 cites·26 claims
- 3376US9882119B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Jan 30, 2018·2 cites·20 claims
- 3476US8897060B2Magnetoresistance effect element and magnetic memoryNAKAYAMA MASAHIKO·Filed 2012·Granted Nov 25, 2014·3 cites·12 claims
- 3574US10230042B2Magnetoresistive element and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2016·Granted Mar 12, 2019·2 cites·6 claims
- 3674US7898846B2Magnetoresistive elementTOSHIBA KK·Filed 2009·Granted Mar 1, 2011·6 cites·5 claims
- 3770US9373776B2Magnetoresistive element and magnetic memory using the sameTOSHIBA KK·Filed 2014·Granted Jun 21, 2016·1 cites·20 claims
- 3868US6831855B2Magnetic memoryTOSHIBA KK·Filed 2003·Granted Dec 14, 2004·13 cites·25 claims
- 3966US9653138B1Magnetic memory and method of writing dataTOSHIBA KK·Filed 2016·Granted May 16, 2017·2 cites·20 claims
- 4063US9590174B2Magnetoresistive memory device and manufacturing method of the sameTOKO MASARU·Filed 2015·Granted Mar 7, 2017·1 cites·13 claims
- 4160US6807094B2Magnetic memoryTOSHIBA KK·Filed 2004·Granted Oct 19, 2004·9 cites·20 claims
- 4258US9312477B2Semiconductor storage device with magnetoresistive elementTOSHIBA KK·Filed 2014·Granted Apr 12, 2016·0 cites·13 claims
- 4356US11208230B2Printing apparatus including optical sensor located at conveying region through which label passesBROTHER IND LTD·Filed 2020·Granted Dec 28, 2021·0 cites·7 claims
- 4454US10305025B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted May 28, 2019·0 cites·10 claims
- 4554US9070866B2Magnetoresistive effect element and manufacturing method thereofTOSHIBA KK·Filed 2013·Granted Jun 30, 2015·0 cites·6 claims
- 4654US7355824B2Magnetoresistive effect element and magnetic memory having the sameTOSHIBA KK·Filed 2004·Granted Apr 8, 2008·4 cites·35 claims
- 4753US7298644B2Magnetoresistance effect device having crystal grain boundary and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Nov 20, 2007·2 cites·23 claims
- 4853US6831857B2Magnetic memoryTOSHIBA KK·Filed 2002·Granted Dec 14, 2004·6 cites·20 claims
- 4952US2025124989A1Semiconductor memory deviceKIOXIA CORP·Filed 2024·Application pending·0 cites
- 5052US2013056349A1Sputtering target and method of manufacturing magnetic memory using the sameKITAGAWA EIJI·Filed 2012·Application pending·0 cites
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →