Inventor · disambiguated record
Bangun Indajang
Also filed as: INDAJANG BANGUN
8 granted patents·2 pending applications·213 citations·filing 2003–2020
86Inventor score
Files withCHARTERED SEMICONDUCTOR MFG3GLOBALFOUNDRIES SG PTE LTD3GLOBALFOUNDRIES US INC1SHEN JINMIAO J1UNIV SINGAPORE1
Top patents by PatentIndex Score
10 records- 0197US8053340B2Method for fabricating semiconductor devices with reduced junction diffusionUNIV SINGAPORE·Filed 2007·Granted Nov 8, 2011·97 cites·26 claims
- 0295US7109099B2End of range (EOR) secondary defect engineering using substitutional carbon dopingCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Sep 19, 2006·102 cites·20 claims
- 0379US11164795B2Transistors with source/drain regions having sections of epitaxial semiconductor materialGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 2, 2021·1 cites·20 claims
- 0478US8354321B2Method for fabricating semiconductor devices with reduced junction diffusionGLOBALFOUNDRIES SG PTE LTD·Filed 2011·Granted Jan 15, 2013·4 cites·20 claims
- 0571US7400018B2End of range (EOR) secondary defect engineering using chemical vapor deposition (CVD) substitutional carbon dopingCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Jul 15, 2008·3 cites·6 claims
- 0670US7855143B2Interconnect capping layer and method of fabricationCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Dec 21, 2010·3 cites·19 claims
- 0765US8034670B2Reliable memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2009·Granted Oct 11, 2011·3 cites·27 claims
- 0849US7879673B2Patterning nanocrystal layersGLOBALFOUNDRIES SG PTE LTD·Filed 2009·Granted Feb 1, 2011·0 cites·20 claims
- 0935US2013084697A1Split gate memory device with gap spacerSHEN JINMIAO J·Filed 2011·Application pending·0 cites
- 1034US2012262985A1Mulit-bit cellWang ying qian·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →