Inventor · disambiguated record
Muneyuki Nishioka
Also filed as: NISHIOKA MUNEYUKI
5 granted patents·3 pending applications·16 citations·filing 2004–2018
69Inventor score
Top patents by PatentIndex Score
8 records- 0190US7948673B2Optical wavelength conversion element having a cesium-lithium-borate crystalUNIV OSAKA·Filed 2008·Granted May 24, 2011·14 cites·9 claims
- 0260US8698282B2Group III nitride semiconductor crystal substrate and semiconductor deviceOKAHISA TAKUJI·Filed 2008·Granted Apr 15, 2014·0 cites·12 claims
- 0356US2010164070A1Group III Nitride Semiconductor Crystal Substrate and Semiconductor DeviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 0452US7744696B2Method for preparing borate-based crystal and laser oscillation apparatusJAPAN SCIENCE & TECH AGENCY·Filed 2004·Granted Jun 29, 2010·2 cites·8 claims
- 0549US7943964B2AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 17, 2011·0 cites·8 claims
- 0647US2009127664A1Group iii nitride semiconductor crystal growing method, group iii nitride semiconductor crystal substrate fabrication method, and group iii nitride semiconductor crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 0747US2009127663A1Group iii nitride semiconductor crystal growing method, group iii nitride semiconductor crystal substrate fabrication method, and group iii nitride semiconductor crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 0836US11456363B2Indium phosphide crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Sep 27, 2022·0 cites·12 claims
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