Inventor · disambiguated record
Jung-Suk Goo
Also filed as: GOO JUNG S · GOO JUNG-SUK
36 granted patents·1 pending application·1,174 citations·filing 1993–2011
98Inventor score
Files withADVANCED MICRO DEVICES INC22GLOBALFOUNDRIES INC4GOLD STAR ELECTRONICS2GOO JUNG-SUK2LG SEMICON CO LTD2
Top patents by PatentIndex Score
37 records- 0199US6800910B2FinFET device incorporating strained silicon in the channel regionADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 5, 2004·295 cites·30 claims
- 0296US7078299B2Formation of finFET using a sidewall epitaxial layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 18, 2006·118 cites·11 claims
- 0394US6955969B2Method of growing as a channel region to reduce source/drain junction capacitanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 18, 2005·89 cites·16 claims
- 0494US6902991B2Semiconductor device having a thick strained silicon layer and method of its formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 7, 2005·76 cites·23 claims
- 0593US7138302B2Method of fabricating an integrated circuit channel regionADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 21, 2006·70 cites·20 claims
- 0693US6929992B1Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shiftADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 16, 2005·78 cites·4 claims
- 0791US6943087B1Semiconductor on insulator MOSFET having strained silicon channelADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 13, 2005·59 cites·15 claims
- 0889US7033869B1Strained silicon semiconductor on insulator MOSFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·48 cites·12 claims
- 0987US6936516B1Replacement gate strained silicon finFET processADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 30, 2005·38 cites·20 claims
- 1085US8099269B2Two-step simulation methodology for aging simulationsTOPALOGLU RASIT O·Filed 2007·Granted Jan 17, 2012·15 cites·17 claims
- 1184US6872613B1Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structureADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 29, 2005·28 cites·25 claims
- 1284US6730576B1Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layerADVANCED MICRO DEVICES INC·Filed 2002·Granted May 4, 2004·28 cites·20 claims
- 1381US7170084B1Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2004·Granted Jan 30, 2007·21 cites·10 claims
- 1480US7176531B1CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectricADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 13, 2007·22 cites·6 claims
- 1580US7015078B1Silicon on insulator substrate having improved thermal conductivity and method of its formationADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 21, 2006·28 cites·15 claims
- 1675US8293606B2Body tie test structure for accurate body effect measurementMADHAVAN SRIRAM·Filed 2010·Granted Oct 23, 2012·4 cites·17 claims
- 1775US7977172B2Dynamic random access memory (DRAM) cells and methods for fabricating the sameADVANCED MICRO DEVICES INC·Filed 2008·Granted Jul 12, 2011·5 cites·27 claims
- 1875US6900143B1Strained silicon MOSFETs having improved thermal dissipationADVANCED MICRO DEVICES INC·Filed 2003·Granted May 31, 2005·18 cites·15 claims
- 1973US6756276B1Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 29, 2004·13 cites·11 claims
- 2070US7012007B1Strained silicon MOSFET having improved thermal conductivity and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 14, 2006·16 cites·9 claims
- 2169US8275596B2Method for robust statistical semiconductor device modelingWASON VINEET·Filed 2006·Granted Sep 25, 2012·9 cites·17 claims
- 2268US7880229B2Body tie test structure for accurate body effect measurementGLOBALFOUNDRIES INC·Filed 2007·Granted Feb 1, 2011·2 cites·12 claims
- 2367US6858503B1Depletion to avoid cross contaminationADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 22, 2005·10 cites·21 claims
- 2466US8618592B2Dynamic random access memory (DRAM) cells and methods for fabricating the sameCHO HYUN-JIN·Filed 2011·Granted Dec 31, 2013·2 cites·16 claims
- 2565US5328862AMethod of making metal oxide semiconductor field effect transistorGOLD STAR ELECTRONICS·Filed 1993·Granted Jul 12, 1994·26 cites·12 claims
- 2664US7932103B2Integrated circuit system with MOS deviceGLOBALFOUNDRIES INC·Filed 2007·Granted Apr 26, 2011·2 cites·20 claims
- 2763US7761823B2Method for adjusting a transistor model for increased circuit simulation accuracyADVANCED MICRO DEVICES INC·Filed 2007·Granted Jul 20, 2010·2 cites·22 claims
- 2863US6962857B1Shallow trench isolation process using oxide deposition and annealADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 8, 2005·10 cites·20 claims
- 2962US8818785B2Method and apparatus for simulating gate capacitance of a tucked transistor deviceGOO JUNG-SUK·Filed 2011·Granted Aug 26, 2014·4 cites·11 claims
- 3056US7462549B2Shallow trench isolation process and structure with minimized strained silicon consumptionADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 9, 2008·5 cites·12 claims
- 3153US7732336B2Shallow trench isolation process and structure with minimized strained silicon consumptionGLOBALFOUNDRIES INC·Filed 2008·Granted Jun 8, 2010·0 cites·10 claims
- 3251US5477072ANonvolatile semiconductor memory deviceGOLD STAR ELECTRONICS·Filed 1994·Granted Dec 19, 1995·13 cites·29 claims
- 3349US5677215AMethod of fabricating a nonvolatile semiconductor memory deviceLG SEMICON CO LTD·Filed 1994·Granted Oct 14, 1997·12 cites·10 claims
- 3447US8586981B2Silicon-on-insulator (“SOI”) transistor test structure for measuring body-effectCHEN QIANG·Filed 2006·Granted Nov 19, 2013·0 cites·11 claims
- 3539US5821145AMethod for isolating elements in a semiconductor deviceLG SEMICON CO LTD·Filed 1997·Granted Oct 13, 1998·8 cites·10 claims
- 3636US7923785B2Field effect transistor having increased carrier mobilityGLOBALFOUNDRIES INC·Filed 2003·Granted Apr 12, 2011·0 cites·3 claims
- 3729US2013117002A1Method and Apparatus for Simulating Junction Capacitance of a Tucked Transistor DeviceGOO JUNG-SUK·Filed 2011·Application pending·0 cites
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