Inventor · disambiguated record
June Lee
Also filed as: LEE JUNE · LEE JUNE-BUM
71 granted patents·6 pending applications·1,103 citations·filing 1998–2025
99Inventor score
Top patents by PatentIndex Score
77 records- 0198US7280398B1System and memory for sequential multi-plane page memory operationsMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 9, 2007·145 cites·18 claims
- 0297US6996014B2Memory devices with page buffer having dual registers and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 7, 2006·58 cites·23 claims
- 0395US7920431B2Asynchronous/synchronous interfaceMICRON TECHNOLOGY INC·Filed 2008·Granted Apr 5, 2011·26 cites·18 claims
- 0495US6813184B2NAND flash memory and method of erasing, programming, and copy-back programming thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 2, 2004·116 cites·19 claims
- 0594US7679961B2Programming and/or erasing a memory device in response to its program and/or erase historyMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 16, 2010·38 cites·15 claims
- 0694US7515485B2External clock tracking pipelined latch schemeMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 7, 2009·34 cites·43 claims
- 0794US7042770B2Memory devices with page buffer having dual registers and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 9, 2006·66 cites·19 claims
- 0892US6731540B2Non-volatile semiconductor memory device having shared row selection circuitSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 4, 2004·72 cites·30 claims
- 0991US7064986B2Non-volatile semiconductor memory device using differential start programming voltage and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 20, 2006·66 cites·26 claims
- 1090US8199574B2Apparatus comparing verified data to original data in the programming of a memory arrayLEE JUNE·Filed 2010·Granted Jun 12, 2012·12 cites·19 claims
- 1190US7489543B1Programming multilevel cell memory arraysMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 10, 2009·19 cites·32 claims
- 1288US8289802B2System and memory for sequential multi-plane page memory operationsLEE JUNE·Filed 2011·Granted Oct 16, 2012·9 cites·8 claims
- 1387US12027227B2Low power management for sleep mode operation of a memory deviceMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 2, 2024·2 cites·20 claims
- 1487US7184308B2Flash memory devices and methods for programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 27, 2007·47 cites·35 claims
- 1585US8248868B2Asynchronous/synchronous interfaceNOBUNAGA DEAN K·Filed 2011·Granted Aug 21, 2012·6 cites·20 claims
- 1685US6735727B1Flash memory device with a novel redundancy selection circuit and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 11, 2004·44 cites·11 claims
- 1783US6724682B2Nonvolatile semiconductor memory device having selective multiple-speed operation modeSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 20, 2004·35 cites·20 claims
- 1882US10456052B2Electronic device having segmental portion on housing thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 29, 2019·5 cites·12 claims
- 1982US7925910B2Systems, methods and devices for limiting current consumption upon power-upMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 12, 2011·11 cites·17 claims
- 2082US7596026B2Program method of non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 29, 2009·12 cites·8 claims
- 2182US7450462B2System and memory for sequential multi-plane page memory operationsMICRON TECHNOLOGY INC·Filed 2007·Granted Nov 11, 2008·9 cites·11 claims
- 2282US7292487B1Independent polling for multi-page programmingMICRON TECHNOLOGY INC·Filed 2006·Granted Nov 6, 2007·12 cites·30 claims
- 2381US7539059B2Selective bit line precharging in non volatile memoryINTEL CORP·Filed 2006·Granted May 26, 2009·13 cites·18 claims
- 2480US8593889B2Asynchronous/synchronous interfaceNOBUNAGA DEAN K·Filed 2012·Granted Nov 26, 2013·3 cites·19 claims
- 2580US7609565B2External clock tracking pipelined latch schemeMICRON TECHNOLOGY INC·Filed 2008·Granted Oct 27, 2009·9 cites·23 claims
- 2679US7738295B2Programming a non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2007·Granted Jun 15, 2010·9 cites·15 claims
- 2779US7227785B2Memory devices with page buffer having dual registers and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 5, 2007·8 cites·8 claims
- 2878US9190153B2Asynchronous/synchronous interfaceMICRON TECHNOLOGY INC·Filed 2013·Granted Nov 17, 2015·3 cites·18 claims
- 2977US8194458B2Programming and/or erasing a memory device in response to its program and/or erase historyLEE JUNE·Filed 2010·Granted Jun 5, 2012·4 cites·17 claims
- 3077US6018487ARead-only memory device having bit line discharge circuitry and method of reading data from the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 25, 2000·39 cites·20 claims
- 3177US5986918ASynchronous read only memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 16, 1999·40 cites·6 claims
- 3275US12417804B2Low power management for sleep mode operation of a memory deviceMICRON TECHNOLOGY INC·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 3375US8917550B2Apparatus comparing verified data to original data in the programming of memory cellsLEE JUNE·Filed 2012·Granted Dec 23, 2014·4 cites·20 claims
- 3475US6795366B2Internal voltage converter scheme for controlling the power-up slope of internal supply voltageSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 21, 2004·22 cites·24 claims
- 3574US2024371749A1Capacitor in a three-dimensional memory structureMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3673US9613706B2Programming and/or erasing a memory device in response to its program and/or erase historyMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 4, 2017·2 cites·20 claims
- 3771US7184307B2Flash memory device capable of preventing program disturbance according to partial programmingSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 27, 2007·18 cites·18 claims
- 3870US10083725B2Asynchronous/synchronous interfaceMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 25, 2018·1 cites·15 claims
- 3970US2025217035A1Independent plane architecture in a memory deviceMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4068US9299441B2Programming and/or erasing a memory device in response to its program and/or erase historyMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 29, 2016·1 cites·23 claims
- 4167US12068240B2Capacitor in a three-dimensional memory structureMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 4267US9390049B2Logical unit address assignmentLEE JUNE·Filed 2011·Granted Jul 12, 2016·2 cites·39 claims
- 4367US7580283B2System and memory for sequential multi-plane page memory operationsMICRON TECHNOLOGY INC·Filed 2007·Granted Aug 25, 2009·4 cites·5 claims
- 4467US6377486B1Block architecture option circuit for nonvolatile semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 23, 2002·14 cites·9 claims
- 4566US12387790B2Double single level cell program in a memory deviceMICRON TECHNOLOGY INC·Filed 2023·Granted Aug 12, 2025·0 cites·16 claims
- 4666US12271592B2Independent plane architecture in a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 8, 2025·0 cites·17 claims
- 4766US2025356922A1Dynamic latches above a three-dimensional non-volatile memory arrayMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4864US8194450B2Methods and control circuitry for programming memory cellsLEE JUNE·Filed 2010·Granted Jun 5, 2012·2 cites·25 claims
- 4964US8050131B2System and memory for sequential multi-plane page memory operationsROUND ROCK RES LLC·Filed 2009·Granted Nov 1, 2011·3 cites·37 claims
- 5064US7602644B2Memory devices with page buffer having dual registers and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·3 cites·12 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when June Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →