Inventor · disambiguated record
Yoshiharu Kanegae
Also filed as: KANEGAE YOSHIHARU
7 granted patents·3 pending applications·39 citations·filing 2004–2015
82Inventor score
Files withHITACHI LTD5KANEGAE YOSHIHARU2ELPIDA MEMORY INC1RENESAS ELECTRONICS CORP1TSUTSUMI TOSHIAKI1
Top patents by PatentIndex Score
10 records- 0177US7215566B2Magnetroresistive random access memory and method of manufacturing the sameHITACHI LTD·Filed 2005·Granted May 8, 2007·12 cites·2 claims
- 0272US8488277B2Magnetic recording medium and magnetic recorderKANEGAE YOSHIHARU·Filed 2010·Granted Jul 16, 2013·5 cites·11 claims
- 0371US8816478B2Semiconductor device having penetration electrode penetrating through semiconductor substrateELPIDA MEMORY INC·Filed 2013·Granted Aug 26, 2014·3 cites·20 claims
- 0469US7180143B2Semiconductor device having a gate insulating layer being mainly made of silicon oxynitride (SiON) having a compression strain state as its strain stateHITACHI LTD·Filed 2004·Granted Feb 20, 2007·14 cites·8 claims
- 0558US9252793B2Semiconductor deviceTSUTSUMI TOSHIAKI·Filed 2010·Granted Feb 2, 2016·1 cites·16 claims
- 0658US2009098413A1Dot-patterned structure magnetic recording medium and method for production thereofHITACHI LTD·Filed 2008·Application pending·0 cites
- 0754US7279739B2Non-volatile semiconductor memory device having nano-dots on a tunnel insulating filmHITACHI LTD·Filed 2006·Granted Oct 9, 2007·4 cites·12 claims
- 0848US9503018B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·0 cites·17 claims
- 0943US2012064374A1Dot-Patterned Structure, Magnetic Recording Medium, and Method for Production ThereofKANEGAE YOSHIHARU·Filed 2011·Application pending·0 cites
- 1037US2007126051A1Semiconductor memory device and its manufacturing methodHITACHI LTD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →