Inventor · disambiguated record
Visvamohan Yegnashankaran
Also filed as: YEGNASHANKARAN VISVAMOHAN
37 granted patents·1 pending application·640 citations·filing 1995–2017
97Inventor score
Files withNAT SEMICONDUCTOR CORP31XIAO JIMMY YONG2YEGNASHANKARAN VISVAMOHAN2HOPPER PETER J1LSI LOGIC CORP1
Top patents by PatentIndex Score
38 records- 0198US6949421B1Method of forming a vertical MOS transistorNAT SEMICONDUCTOR CORP·Filed 2004·Granted Sep 27, 2005·240 cites·19 claims
- 0291US7075133B1Semiconductor die with heat and electrical pipesNAT SEMICONDUCTOR CORP·Filed 2004·Granted Jul 11, 2006·57 cites·14 claims
- 0389US7996034B1Cellular telephone handset with increased reception sensitivity and reduced transmit power levelsNAT SEMICONDUCTOR CORP·Filed 2005·Granted Aug 9, 2011·18 cites·14 claims
- 0487US6881943B1Convex image sensor and method of forming the sensorNAT SEMICONDUCTOR CORP·Filed 2002·Granted Apr 19, 2005·33 cites·25 claims
- 0585US7633131B1MEMS semiconductor sensor deviceNAT SEMICONDUCTOR CORP·Filed 2007·Granted Dec 15, 2009·9 cites·19 claims
- 0684US6781239B1Integrated circuit and method of forming the integrated circuit having a die with high Q inductors and capacitors attached to a die with a circuit as a flip chipNAT SEMICONDUCTOR CORP·Filed 2001·Granted Aug 24, 2004·21 cites·20 claims
- 0782US7705421B1Semiconductor die with an integrated inductorNAT SEMICONDUCTOR CORP·Filed 2005·Granted Apr 27, 2010·11 cites·20 claims
- 0882US6677235B1Silicon die with metal feed through structureNAT SEMICONDUCTOR CORP·Filed 2001·Granted Jan 13, 2004·29 cites·20 claims
- 0981US6933212B1Apparatus and method for dicing semiconductor wafersNAT SEMICONDUCTOR CORP·Filed 2004·Granted Aug 23, 2005·25 cites·19 claims
- 1079US7192819B1Semiconductor sensor device using MEMS technologyNAT SEMICONDUCTOR CORP·Filed 2004·Granted Mar 20, 2007·21 cites·20 claims
- 1179US6833781B1High Q inductor in multi-level interconnectNAT SEMICONDUCTOR CORP·Filed 2002·Granted Dec 21, 2004·27 cites·20 claims
- 1272US7338840B1Method of forming a semiconductor die with heat and electrical pipesNAT SEMICONDUCTOR CORP·Filed 2006·Granted Mar 4, 2008·4 cites·17 claims
- 1371US7329555B1Method of selectively forming MEMS-based semiconductor devices at the end of a common fabrication processNAT SEMICONDUCTOR CORP·Filed 2004·Granted Feb 12, 2008·13 cites·14 claims
- 1468US7052977B1Method of dicing a semiconductor wafer that substantially reduces the width of the saw streetNAT SEMICONDUCTOR CORP·Filed 2004·Granted May 30, 2006·11 cites·19 claims
- 1568US6100590ALow capacitance multilevel metal interconnect structure and method of manufactureNAT SEMICONDUCTOR CORP·Filed 1998·Granted Aug 8, 2000·36 cites·13 claims
- 1667US6946321B1Method of forming the integrated circuit having a die with high Q inductors and capacitors attached to a die with a circuit as a flip chipNAT SEMICONDUCTOR CORP·Filed 2004·Granted Sep 20, 2005·8 cites·17 claims
- 1762US7754502B1Backside defect detector and method that determines whether unwanted materials are present on the backside of a semiconductor waferNAT SEMICONDUCTOR CORP·Filed 2006·Granted Jul 13, 2010·1 cites·20 claims
- 1861US7863644B1Bipolar transistor and method of forming the bipolar transistor with a backside contactNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jan 4, 2011·2 cites·20 claims
- 1960US8303484B2Self-propelled robotic device that moves through bodily and other passagewaysHOPPER PETER J·Filed 2009·Granted Nov 6, 2012·1 cites·14 claims
- 2059US7790602B1Method of forming a metal interconnect with capacitive structures that adjust the capacitance of the interconnectNAT SEMICONDUCTOR CORP·Filed 2006·Granted Sep 7, 2010·1 cites·17 claims
- 2159US6730969B1Radiation hardened MOS transistorNAT SEMICONDUCTOR CORP·Filed 2002·Granted May 4, 2004·9 cites·21 claims
- 2258US7482228B1Method of forming a MOS transistor with a litho-less gateNAT SEMICONDUCTOR CORP·Filed 2005·Granted Jan 27, 2009·1 cites·19 claims
- 2358US7042092B1Multilevel metal interconnect and method of forming the interconnect with capacitive structures that adjust the capacitance of the interconnectNAT SEMICONDUCTOR CORP·Filed 2001·Granted May 9, 2006·7 cites·23 claims
- 2457US6777288B1Vertical MOS transistorNAT SEMICONDUCTOR CORP·Filed 2002·Granted Aug 17, 2004·6 cites·15 claims
- 2557US5799080ASemiconductor chip having identification/encryption codeLSI LOGIC CORP·Filed 1995·Granted Aug 25, 1998·41 cites·11 claims
- 2654US8198150B1Method of forming a semiconductor die with aluminum-spiked heat pipesYEGNASHANKARAN VISVAMOHAN·Filed 2009·Granted Jun 12, 2012·1 cites·13 claims
- 2752US9768781B2Identification circuit and IC chip comprising the sameXIAO JIMMY YONG·Filed 2015·Granted Sep 19, 2017·1 cites·15 claims
- 2850US7646064B1Semiconductor die with aluminum-spiked heat pipesNAT SEMICONDUCTOR CORP·Filed 2006·Granted Jan 12, 2010·0 cites·13 claims
- 2950US7098095B1Method of forming a MOS transistor with a layer of silicon germanium carbonNAT SEMICONDUCTOR CORP·Filed 2004·Granted Aug 29, 2006·4 cites·13 claims
- 3049US8288834B1Semiconductor wafer and die that include an integrated circuit and two or more different MEMS-based semiconductor devicesPADMANABHAN GOBI R·Filed 2007·Granted Oct 16, 2012·0 cites·15 claims
- 3145US6746956B1Hermetic seal for silicon die with metal feed through structureNAT SEMICONDUCTOR CORP·Filed 2002·Granted Jun 8, 2004·1 cites·14 claims
- 3245US2012067396A1Hydrophobic Solar Concentrator and Method of Using and Forming the Hydrophobic Solar ConcentratorYEGNASHANKARAN VISVAMOHAN·Filed 2010·Application pending·0 cites
- 3342US7764517B2Power supply with reduced power consumption when a load is disconnected from the power supplyNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jul 27, 2010·0 cites·20 claims
- 3441US7188044B1World-wide distributed testing for integrated circuitsNAT SEMICONDUCTOR CORP·Filed 2004·Granted Mar 6, 2007·1 cites·2 claims
- 3540US7109571B1Method of forming a hermetic seal for silicon die with metal feed through structureNAT SEMICONDUCTOR CORP·Filed 2004·Granted Sep 19, 2006·0 cites·18 claims
- 3639US9941886B2Integrated circuit (IC) chip comprising an identification circuitXIAO JIMMY YONG·Filed 2017·Granted Apr 10, 2018·0 cites·14 claims
- 3738US6723593B1Deep submicron MOS transistor with increased threshold voltageNAT SEMICONDUCTOR CORP·Filed 2002·Granted Apr 20, 2004·0 cites·20 claims
- 3837US7230301B1Single-crystal silicon semiconductor structureNAT SEMICONDUCTOR CORP·Filed 2004·Granted Jun 12, 2007·0 cites·27 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →