Inventor · disambiguated record
Reiner Barthelmess
Also filed as: BARTHELMESS REINER
27 granted patents·4 pending applications·184 citations·filing 1999–2025
95Inventor score
Files withINFINEON TECHNOLOGIES AG15INFINEON TECH BIPOLAR GMBH & CO KG6BARTHELMESS REINER5EUPEC GMBH & CO KG3SCHULZE HANS-JOACHIM2
Top patents by PatentIndex Score
31 records- 0194US7361970B2Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zoneINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 22, 2008·21 cites·13 claims
- 0291US6696705B1Power semiconductor component having a mesa edge terminationEUPEC GMBH & CO KG·Filed 2000·Granted Feb 24, 2004·69 cites·11 claims
- 0383US6441408B2Power semiconductor component for high reverse voltagesINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 27, 2002·35 cites·25 claims
- 0479US7667297B2Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zoneINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 23, 2010·5 cites·8 claims
- 0576US7749876B2Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zoneINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jul 6, 2010·4 cites·19 claims
- 0675US7884389B2Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production methodINFINEON TECHNOLOGIES AG·Filed 2007·Granted Feb 8, 2011·5 cites·15 claims
- 0775US7629665B2Semiconductor component with a channel stop zoneINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 8, 2009·6 cites·16 claims
- 0869US12342581B2Method and device for producing an edge structure of a semiconductor componentINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2022·Granted Jun 24, 2025·0 cites·13 claims
- 0969US2025254933A1Device for Producing an Edge Structure of a Semiconductor ComponentINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2025·Application pending·0 cites
- 1067US6770917B2High-voltage diodeINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 3, 2004·13 cites·13 claims
- 1166US7812368B2High speed diodeINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 12, 2010·3 cites·22 claims
- 1263US9269769B2Semiconductor component including a short-circuit structureSCHULZE HANS-JOACHIM·Filed 2008·Granted Feb 23, 2016·1 cites·25 claims
- 1361US7268079B2Method for fabricating a semiconductor having a field zoneINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 11, 2007·2 cites·29 claims
- 1460US7687826B2Thyristor with recovery protectionINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 30, 2010·2 cites·22 claims
- 1560US6660569B1Method for producing a power semiconductor device with a stop zoneEUPEC GMBH & CO KG·Filed 1999·Granted Dec 9, 2003·18 cites·14 claims
- 1659US8034700B2Method of fabricating a diodeINFINEON TECHNOLOGIES AG·Filed 2009·Granted Oct 11, 2011·0 cites·12 claims
- 1756US7838969B2DiodeINFINEON TECHNOLOGIES AG·Filed 2008·Granted Nov 23, 2010·0 cites·12 claims
- 1855US8178411B2Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zoneBARTHELMESS REINER·Filed 2009·Granted May 15, 2012·0 cites·11 claims
- 1950US8187937B2Semiconductor component and method for producing the sameBARTHELMESS REINER·Filed 2008·Granted May 29, 2012·0 cites·12 claims
- 2050US7319250B2Semiconductor component and method for producing the sameEUPEC GMBH & CO KG·Filed 2005·Granted Jan 15, 2008·0 cites·14 claims
- 2149US9876004B2Semiconductor component including a short-circuit structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 23, 2018·0 cites·13 claims
- 2248US8415710B2Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production methodSCHULZE HANS-JOACHIM·Filed 2011·Granted Apr 9, 2013·0 cites·20 claims
- 2346US11973147B2Power semiconductor component for voltage limiting, arrangement having two power semiconductor components, and a method for voltage limitingINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2022·Granted Apr 30, 2024·0 cites·18 claims
- 2446US2009057714A1Thyristor and methods for producing a thyristorINFINEON TECHNOLOGIES AG·Filed 2008·Application pending·0 cites
- 2540US8018064B2Arrangement including a semiconductor device and a connecting elementINFINEON TECHNOLOGIES AG·Filed 2007·Granted Sep 13, 2011·0 cites·38 claims
- 2640US2007007587A1DiodeBARTHELMESS REINER·Filed 2006·Application pending·0 cites
- 2737US8946867B2Semiconductor component with optimized edge terminationBARTHELMESS REINER·Filed 2012·Granted Feb 3, 2015·0 cites·9 claims
- 2835US11664445B2Short-circuit semiconductor component and method for operating itINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2020·Granted May 30, 2023·0 cites·25 claims
- 2934US2005258448A1Thyristor component with improved blocking capabilities in the reverse directionBARTHELMESS REINER·Filed 2005·Application pending·0 cites
- 3032US11646365B2Short-circuit semiconductor component and method for operating sameINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2019·Granted May 9, 2023·0 cites·18 claims
- 3128US10008486B2Disc-shaped thyristor for a plurality of plated-through semiconductor componentsINFINEON TECH BIPOLAR GMBH & CO KG·Filed 2015·Granted Jun 26, 2018·0 cites·18 claims
Join the waitlist — get patent alerts
Get an alert when Reiner Barthelmess files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →