Inventor · disambiguated record
Hiroshi Aozasa
Also filed as: AOZASA HIROSHI
6 granted patents·478 citations·filing 1996–2010
87Inventor score
Top patents by PatentIndex Score
6 records- 0195US6054734ANon-volatile memory cell having dual gate electrodesSONY CORP·Filed 1997·Granted Apr 25, 2000·172 cites·29 claims
- 0295US5751037ANon-volatile memory cell having dual gate electrodesSONY CORP·Filed 1996·Granted May 12, 1998·179 cites·17 claims
- 0394US6906390B2Nonvolatile semiconductor storage and method for manufacturing the sameSONY CORP·Filed 2001·Granted Jun 14, 2005·88 cites·12 claims
- 0489US7259433B2Non-volatile semiconductor memory device and method for producing sameSONY CORP·Filed 2005·Granted Aug 21, 2007·18 cites·31 claims
- 0585US8471233B2Semiconductor memory and method of manufacturing the sameAOZASA HIROSHI·Filed 2010·Granted Jun 25, 2013·15 cites·9 claims
- 0674US7919806B2Nonvolatile semiconductor memory device and fabrication method thereforSONY CORP·Filed 2007·Granted Apr 5, 2011·6 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →