Inventor · disambiguated record
David Cheung
Also filed as: CHEUNG DAVID · CHEUNG DAVID W · CHEUNG DAVID WINGTO
102 granted patents·15 pending applications·10,038 citations·filing 1989–2024
99Inventor score
Top patents by PatentIndex Score
117 records- 0199US6413583B1Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compoundAPPLIED MATERIALS INC·Filed 1999·Granted Jul 2, 2002·725 cites·6 claims
- 0299US6303523B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Oct 16, 2001·751 cites·53 claims
- 0399US6072227ALow power method of depositing a low k dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1998·Granted Jun 6, 2000·541 cites·26 claims
- 0499US6054379AMethod of depositing a low k dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1998·Granted Apr 25, 2000·609 cites·98 claims
- 0598US6340435B1Integrated low K dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 1999·Granted Jan 22, 2002·536 cites·14 claims
- 0698US5908672AMethod and apparatus for depositing a planarized passivation layerAPPLIED MATERIALS INC·Filed 1997·Granted Jun 1, 1999·593 cites·21 claims
- 0797US6858153B2Integrated low K dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2001·Granted Feb 22, 2005·256 cites·21 claims
- 0897US6593247B1Method of depositing low k films using an oxidizing plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·129 cites·63 claims
- 0997US6562690B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted May 13, 2003·102 cites·26 claims
- 1097US6448187B2Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Sep 10, 2002·98 cites·30 claims
- 1197US6358573B1Mixed frequency CVD processAPPLIED MATERIALS INC·Filed 2000·Granted Mar 19, 2002·130 cites·20 claims
- 1297US6348725B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1999·Granted Feb 19, 2002·161 cites·38 claims
- 1397US6171945B1CVD nanoporous silica low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Jan 9, 2001·317 cites·43 claims
- 1497US6039834AApparatus and methods for upgraded substrate processing system with microwave plasma sourceAPPLIED MATERIALS INC·Filed 1997·Granted Mar 21, 2000·242 cites·25 claims
- 1597US5844195ARemote plasma sourceAPPLIED MATERIALS INC·Filed 1996·Granted Dec 1, 1998·388 cites·21 claims
- 1696US6734115B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted May 11, 2004·67 cites·12 claims
- 1796US6730593B2Method of depositing a low K dielectric with organo silaneAPPLIED MATERIALS INC·Filed 2001·Granted May 4, 2004·60 cites·10 claims
- 1896US6660656B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·111 cites·11 claims
- 1996US6596655B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Jul 22, 2003·77 cites·20 claims
- 2096US6541282B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 1, 2003·80 cites·17 claims
- 2196US6537929B1CVD plasma assisted low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Mar 25, 2003·118 cites·34 claims
- 2296US6511909B1Method of depositing a low K dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1999·Granted Jan 28, 2003·100 cites·20 claims
- 2396US6287990B1CVD plasma assisted low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Sep 11, 2001·233 cites·70 claims
- 2496US6245690B1Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Jun 12, 2001·132 cites·20 claims
- 2596US6193802B1Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipmentAPPLIED MATERIALS INC·Filed 1996·Granted Feb 27, 2001·191 cites·34 claims
- 2696US6194628B1Method and apparatus for cleaning a vacuum line in a CVD systemAPPLIED MATERIALS INC·Filed 1995·Granted Feb 27, 2001·170 cites·40 claims
- 2796US6187072B1Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissionsAPPLIED MATERIALS INC·Filed 1996·Granted Feb 13, 2001·154 cites·29 claims
- 2895US7560377B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jul 14, 2009·19 cites·16 claims
- 2995US6709715B1Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bondsAPPLIED MATERIALS INC·Filed 1999·Granted Mar 23, 2004·109 cites·5 claims
- 3095US6511903B1Method of depositing a low k dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1999·Granted Jan 28, 2003·91 cites·61 claims
- 3195US6098568AMixed frequency CVD apparatusAPPLIED MATERIALS INC·Filed 1997·Granted Aug 8, 2000·106 cites·5 claims
- 3295US5792269AGas distribution for CVD systemsAPPLIED MATERIALS INC·Filed 1995·Granted Aug 11, 1998·164 cites·14 claims
- 3394US7740768B1Simultaneous front side ash and backside cleanNOVELLUS SYSTEMS INC·Filed 2006·Granted Jun 22, 2010·20 cites·21 claims
- 3494US6209484B1Method and apparatus for depositing an etch stop layerAPPLIED MATERIALS INC·Filed 2000·Granted Apr 3, 2001·74 cites·19 claims
- 3594US6086952AChemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomerAPPLIED MATERIALS INC·Filed 1998·Granted Jul 11, 2000·93 cites·4 claims
- 3694US5158644AReactor chamber self-cleaning processAPPLIED MATERIALS INC·Filed 1991·Granted Oct 27, 1992·222 cites·12 claims
- 3793US8916477B2Polysilicon etch with high selectivityNOVELLUS SYSTEMS INC·Filed 2013·Granted Dec 23, 2014·17 cites·15 claims
- 3893US8129281B1Plasma based photoresist removal system for cleaning post ash residueCHEUNG DAVID·Filed 2005·Granted Mar 6, 2012·30 cites·16 claims
- 3993US7651725B2Low dielectric constant film produced from silicon compounds comprising silicon-carbon bondAPPLIED MATERIALS INC·Filed 2007·Granted Jan 26, 2010·7 cites·6 claims
- 4093US6770556B2Method of depositing a low dielectric with organo silaneAPPLIED MATERIALS INC·Filed 2002·Granted Aug 3, 2004·29 cites·34 claims
- 4193US6743737B2Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted Jun 1, 2004·39 cites·29 claims
- 4293US6680420B2Apparatus for cleaning an exhaust line in a semiconductor processing systemAPPLIED MATERIALS INC·Filed 2000·Granted Jan 20, 2004·45 cites·13 claims
- 4393US6669858B2Integrated low k dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 30, 2003·47 cites·14 claims
- 4493US6660663B1Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compoundsAPPLIED MATERIALS INC·Filed 2000·Granted Dec 9, 2003·62 cites·22 claims
- 4593US6361707B1Apparatus and methods for upgraded substrate processing system with microwave plasma sourceAPPLIED MATERIALS INC·Filed 2000·Granted Mar 26, 2002·39 cites·26 claims
- 4693US5911834AGas delivery systemAPPLIED MATERIALS INC·Filed 1996·Granted Jun 15, 1999·133 cites·21 claims
- 4792US12272570B2Systems and methods for metastable activated radical selective strip and etch using dual plenum showerheadLAM RES CORP·Filed 2024·Granted Apr 8, 2025·1 cites·19 claims
- 4892US8819763B1Dynamic access policiesCHEUNG DAVID W·Filed 2008·Granted Aug 26, 2014·48 cites·17 claims
- 4992US8193096B2High dose implantation strip (HDIS) in H2 base chemistryGOTO HARUHIRO HARRY·Filed 2008·Granted Jun 5, 2012·16 cites·26 claims
- 5092US7023092B2Low dielectric constant film produced from silicon compounds comprising silicon-carbon bondsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 4, 2006·25 cites·12 claims
Showing the top 50 of 117 patent records by PatentIndex Score.
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