Inventor · disambiguated record
Christian Wetzel
Also filed as: WETZEL CHRISTIAN · WETZEL CHRISTIAN MARTIN
7 granted patents·4 pending applications·18 citations·filing 2010–2021
79Inventor score
Top patents by PatentIndex Score
11 records- 0191US12183852B2Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structureUNM RAINFOREST INNOVATIONS·Filed 2021·Granted Dec 31, 2024·2 cites·19 claims
- 0287US9520472B2Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structureSTC UNM·Filed 2013·Granted Dec 13, 2016·9 cites·20 claims
- 0383US10453996B2Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structureSTC UNM·Filed 2016·Granted Oct 22, 2019·3 cites·20 claims
- 0482US10164082B2Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structureSTC UNM·Filed 2017·Granted Dec 25, 2018·3 cites·11 claims
- 0572US10644144B2Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structureSTC UNM·Filed 2018·Granted May 5, 2020·1 cites·9 claims
- 0661US10957819B2Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structureUNM RAINFOREST INNOVATIONS·Filed 2019·Granted Mar 23, 2021·0 cites·9 claims
- 0745US8916885B2Semiconductor device with efficient carrier recombinationKOUDYMOV ALEXEI·Filed 2011·Granted Dec 23, 2014·0 cites·10 claims
- 0841US2011117376A1Method of Gallium Nitride growth over metallic substrate using Vapor Phase EpitaxyZHU MINGWEI·Filed 2010·Application pending·0 cites
- 0939US2011042709A1Free-standing mounted light emitting diodes for general lightingSTARK CHRISTOPH·Filed 2010·Application pending·0 cites
- 1034US2011254134A1Method of Group III Metal - Nitride Material Growth Using Metal Organic Vapor Phase EpitaxyDETCHPROHM THEERADETCH·Filed 2011·Application pending·0 cites
- 1131US2012052679A1Method of Fabricating an Ohmic contact to n-type Gallium NitrideHOU WENTING·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →