Inventor · disambiguated record
Kota Umezawa
Also filed as: UMEZAWA KOTA
11 granted patents·14 pending applications·171 citations·filing 2001–2022
90Inventor score
Top patents by PatentIndex Score
25 records- 0196US7964241B2Film formation method and apparatus for semiconductor processTOKYO ELECTRON LTD·Filed 2007·Granted Jun 21, 2011·75 cites·10 claims
- 0288US7419550B2Oxidizing method and oxidizing unit of object for object to be processedTOKYO ELECTRON LTD·Filed 2005·Granted Sep 2, 2008·13 cites·6 claims
- 0386US6599845B2Oxidizing method and oxidation systemTOKYO ELECTRON LTD·Filed 2001·Granted Jul 29, 2003·31 cites·10 claims
- 0485US7674724B2Oxidizing method and oxidizing unit for object to be processedTOKYO ELECTRON LTD·Filed 2008·Granted Mar 9, 2010·9 cites·13 claims
- 0582US7605095B2Heat processing method and apparatus for semiconductor processTOKYO ELECTRON LTD·Filed 2008·Granted Oct 20, 2009·8 cites·13 claims
- 0673US7208428B2Method and apparatus for treating article to be treatedTOKYO ELECTRON LTD·Filed 2001·Granted Apr 24, 2007·17 cites·7 claims
- 0772US7981809B2Film formation method and apparatus for semiconductor processTOKYO ELECTRON LTD·Filed 2005·Granted Jul 19, 2011·4 cites·7 claims
- 0870US7452826B2Oxidation method and oxidation systemTOKYO ELECTRON LTD·Filed 2006·Granted Nov 18, 2008·3 cites·4 claims
- 0966US7129186B2Oxidation method and oxidation systemTOKYO ELECTRON LTD·Filed 2004·Granted Oct 31, 2006·10 cites·11 claims
- 1056US2023197447A1Method and apparatus for forming crystalline silicon filmTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1154US8183158B2Semiconductor processing apparatus and method for using sameTOMITA MASAHIKO·Filed 2007·Granted May 22, 2012·1 cites·14 claims
- 1252US2025343041A1Substrate-processing method and substrate-processing systemTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1352US2008311760A1Film formation method and apparatus for semiconductor processNODERA NOBUTAKE·Filed 2008·Application pending·0 cites
- 1448US2023175115A1Selective film formation methodTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 1546US2007048145A1Vacuum evacuation device and method, and substrate processing apparatus and methodISHII KATSUTOSHI·Filed 2006·Application pending·0 cites
- 1645US2011281443A1Film formation method and film formation apparatusCHOU PAO-HWA·Filed 2011·Application pending·0 cites
- 1742US2016265136A1Film forming method, film forming apparatus, and storage mediumTOKYO ELECTRON LTD·Filed 2016·Application pending·0 cites
- 1842US2014038394A1Method and apparatus of forming compound semiconductor filmTOKYO ELECTRON LTD·Filed 2013·Application pending·0 cites
- 1941US2003224618A1Oxidizing method and oxidation systemFiled 2003·Application pending·0 cites
- 2040US9966258B2Method of growing gallium nitride-based crystal and heat treatment apparatusTOKYO ELECTRON LTD·Filed 2015·Granted May 8, 2018·0 cites·4 claims
- 2140US2005136693A1Thermal processing unit and thermal processing methodFiled 2004·Application pending·0 cites
- 2240US2006003542A1Method of oxidizing object to be processed and oxidation systemSUZUKI KEISUKE·Filed 2005·Application pending·0 cites
- 2338US2014318457A1Method of cleaning film forming apparatus and film forming apparatusTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 2438US2006099805A1Heat treating system and heat treating methodFUJITA TAKEHIKO·Filed 2003·Application pending·0 cites
- 2537US2012164848A1Method for forming nitride filmFUJII MOTOKI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →