Inventor · disambiguated record
Chang-Yeon Yu
Also filed as: YU CHANG-YEON
10 granted patents·26 citations·filing 2016–2021
84Inventor score
Technology areasG11C
Files withSAMSUNG ELECTRONICS CO LTD10
Top patents by PatentIndex Score
10 records- 0186US10008270B2Non-volatile memory device and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 26, 2018·8 cites·19 claims
- 0283US9953703B2Programming method of non volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 24, 2018·7 cites·20 claims
- 0381US10593408B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 17, 2020·4 cites·17 claims
- 0469US10170192B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 1, 2019·2 cites·20 claims
- 0564US9818483B2Row decoder and a memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 14, 2017·2 cites·14 claims
- 0659US10163475B2Non-volatile memory device having dummy cells and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·18 claims
- 0757US10090045B2Programming method of non volatile memory device according to program speed of memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 2, 2018·1 cites·15 claims
- 0857US9978458B2Memory device, memory system, and read/verify operation method of the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 22, 2018·1 cites·19 claims
- 0944US11961564B2Nonvolatile memory device with intermediate switching transistors and programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 16, 2024·0 cites·19 claims
- 1038US11183249B2Nonvolatile memory device with intermediate switching transistors and programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 23, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →