Inventor · disambiguated record
Chu-Kuang Liu
Also filed as: LIU CHU-KUANG
19 granted patents·4 pending applications·101 citations·filing 1999–2024
92Inventor score
Top patents by PatentIndex Score
23 records- 0192US9653560B1Method of fabricating power MOSFETEXCELLIANCE MOS CORP·Filed 2016·Granted May 16, 2017·10 cites·19 claims
- 0278US10784336B2Gallium nitride high electron mobility transistor and gate structure thereofEXCELLIANCE MOS CORP·Filed 2019·Granted Sep 22, 2020·3 cites·10 claims
- 0378US8421180B2Semiconductor structureLIU CHU-KUANG·Filed 2012·Granted Apr 16, 2013·4 cites·15 claims
- 0477US8664714B2Power MOSFETLIU CHU-KUANG·Filed 2012·Granted Mar 4, 2014·5 cites·19 claims
- 0573US8222678B2Semiconductor structureLIU CHU-KUANG·Filed 2009·Granted Jul 17, 2012·4 cites·7 claims
- 0670US6639816B2Power supply system with AC redundant power sources and safety deviceDELTA ELECTRONICS INC·Filed 2001·Granted Oct 28, 2003·28 cites·11 claims
- 0768US6608403B2Power supply system with AC redundant power sources and DC redundant power suppliesDELTA ELECTRONICS INC·Filed 2001·Granted Aug 19, 2003·27 cites·8 claims
- 0864US2023411509A1Gallium nitride high electron mobility transistorEXCELLIANCE MOS CORP·Filed 2023·Application pending·0 cites
- 0962US9153652B2Power semiconductor device and edge terminal structure thereof including an L-shaped electric-plateLIU CHU-KUANG·Filed 2012·Granted Oct 6, 2015·1 cites·10 claims
- 1059US2025380495A1Transistor structureEXCELLIANCE MOS CORP·Filed 2024·Application pending·0 cites
- 1158US9071079B2Power supply system with multiple power sources in parallelLIU CHU KUANG·Filed 2011·Granted Jun 30, 2015·2 cites·11 claims
- 1258US2021343840A1Manufacturing method of trench mosfetEXCELLIANCE MOS CORP·Filed 2021·Application pending·0 cites
- 1357US12414351B2Manufacturing method of split gate trench deviceEXCELLIANCE MOS CORP·Filed 2023·Granted Sep 9, 2025·0 cites·11 claims
- 1455US2022328682A1Gallium nitride high electron mobility transistorEXCELLIANCE MOS CORP·Filed 2021·Application pending·0 cites
- 1554US11588021B2Trench MOSFET and manufacturing method of the sameEXCELLIANCE MOS CORP·Filed 2020·Granted Feb 21, 2023·0 cites·4 claims
- 1653US9502511B2Trench insulated gate bipolar transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltageEXCELLIANCE MOS CORP·Filed 2015·Granted Nov 22, 2016·0 cites·8 claims
- 1753US9502512B2Trench power metal oxide semiconductor field effect transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltageEXCELLIANCE MOS CORP·Filed 2015·Granted Nov 22, 2016·0 cites·7 claims
- 1851US12159914B2Trench power semiconductor deviceEXCELLIANCE MOS CORP·Filed 2022·Granted Dec 3, 2024·0 cites·14 claims
- 1950US8518778B2Method of forming semiconductor structureLIU CHU-KUANG·Filed 2012·Granted Aug 27, 2013·0 cites·11 claims
- 2050US6204612B1Discharge deviceDELTA ELECTRONICS INC·Filed 1999·Granted Mar 20, 2001·17 cites·12 claims
- 2145US10720506B1Method of manufacturing gate structure for gallium nitride high electron mobility transistorEXCELLIANCE MOS CORP·Filed 2019·Granted Jul 21, 2020·0 cites·10 claims
- 2241US10388784B2Power chip and structure of transistorEXCELLIANCE MOS CORP·Filed 2017·Granted Aug 20, 2019·0 cites·9 claims
- 2339US9941357B2Power MOSFETEXCELLIANCE MOS CORP·Filed 2016·Granted Apr 10, 2018·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →