Inventor · disambiguated record
Helmut Hagleitner
Also filed as: HAGLEITNER HELMUT
33 granted patents·2 pending applications·560 citations·filing 2001–2016
97Inventor score
Top patents by PatentIndex Score
35 records- 0198US7892974B2Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2006·Granted Feb 22, 2011·80 cites·23 claims
- 0298US7125786B2Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2005·Granted Oct 24, 2006·121 cites·19 claims
- 0396US6794684B2Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the sameCREE INC·Filed 2003·Granted Sep 21, 2004·133 cites·46 claims
- 0495US8563372B2Methods of forming contact structures including alternating metal and silicon layers and related devicesHAGLEITNER HELMUT·Filed 2010·Granted Oct 22, 2013·40 cites·30 claims
- 0594US9214352B2Ohmic contact to semiconductor deviceHAGLEITNER HELMUT·Filed 2011·Granted Dec 15, 2015·34 cites·42 claims
- 0693US7525122B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2005·Granted Apr 28, 2009·22 cites·39 claims
- 0788US7875545B2Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devicesCREE INC·Filed 2008·Granted Jan 25, 2011·14 cites·19 claims
- 0888US7858460B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2009·Granted Dec 28, 2010·10 cites·25 claims
- 0987US6972436B2High voltage, high temperature capacitor and interconnection structuresCREE INC·Filed 2001·Granted Dec 6, 2005·39 cites·37 claims
- 1086US9812338B2Encapsulation of advanced devices using novel PECVD and ALD schemesCREE INC·Filed 2013·Granted Nov 7, 2017·8 cites·17 claims
- 1182US8970010B2Wafer-level die attach metallizationCREE INC·Filed 2013·Granted Mar 3, 2015·5 cites·21 claims
- 1280US8907350B2Semiconductor devices having improved adhesion and methods of fabricating the sameMIECZKOWSKI VAN·Filed 2010·Granted Dec 9, 2014·5 cites·34 claims
- 1379US9490169B2Method of forming vias in silicon carbide and resulting devices and circuitsRING ZOLTAN·Filed 2010·Granted Nov 8, 2016·4 cites·12 claims
- 1478US9202703B2Ni-rich Schottky contactCREE INC·Filed 2012·Granted Dec 1, 2015·5 cites·28 claims
- 1577US9548206B2Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge featuresHAGLEITNER HELMUT·Filed 2011·Granted Jan 17, 2017·4 cites·33 claims
- 1677US9343543B2Gate contact for a semiconductor device and methods of fabrication thereofCREE INC·Filed 2015·Granted May 17, 2016·2 cites·17 claims
- 1775US9640623B2Semiconductor device with improved field plateCREE INC·Filed 2014·Granted May 2, 2017·2 cites·23 claims
- 1875US8896122B2Semiconductor devices having gates including oxidized nickelMIECZKOWSKI VAN·Filed 2010·Granted Nov 25, 2014·4 cites·14 claims
- 1974US9536783B2Wafer-level die attach metallizationCREE INC·Filed 2015·Granted Jan 3, 2017·2 cites·8 claims
- 2074US9142631B2Multilayer diffusion barriers for wide bandgap Schottky barrier devicesMIECZKOWSKI VAN·Filed 2010·Granted Sep 22, 2015·4 cites·8 claims
- 2173US6998322B2Methods of fabricating high voltage, high temperature capacitor and interconnection structuresCREE INC·Filed 2003·Granted Feb 14, 2006·16 cites·19 claims
- 2271US9608078B2Semiconductor device with improved field plateCREE INC·Filed 2014·Granted Mar 28, 2017·2 cites·17 claims
- 2368US8994073B2Hydrogen mitigation schemes in the passivation of advanced devicesCREE INC·Filed 2012·Granted Mar 31, 2015·2 cites·23 claims
- 2463US8202796B2Method of forming vias in silicon carbide and resulting devices and circuitsRING ZOLTAN·Filed 2011·Granted Jun 19, 2012·1 cites·7 claims
- 2561US8994182B2Dielectric solder barrier for semiconductor devicesCREE INC·Filed 2012·Granted Mar 31, 2015·1 cites·22 claims
- 2659US10367074B2Method of forming vias in silicon carbide and resulting devices and circuitsCREE INC·Filed 2016·Granted Jul 30, 2019·0 cites·9 claims
- 2754US10090394B2Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge featuresCREE INC·Filed 2016·Granted Oct 2, 2018·0 cites·24 claims
- 2852US8969927B2Gate contact for a semiconductor device and methods of fabrication thereofCREE INC·Filed 2013·Granted Mar 3, 2015·0 cites·27 claims
- 2945US10020244B2Polymer via plugs with high thermal integrityMIECZKOWSKI VAN·Filed 2012·Granted Jul 10, 2018·0 cites·18 claims
- 3043US9640627B2Schottky contactHAGLEITNER HELMUT·Filed 2012·Granted May 2, 2017·0 cites·15 claims
- 3143US9269662B2Using stress reduction barrier sub-layers in a semiconductor dieCREE INC·Filed 2012·Granted Feb 23, 2016·0 cites·20 claims
- 3243US8138583B2Diode having reduced on-resistance and associated method of manufactureSRIRAM SAPTHARISHI·Filed 2007·Granted Mar 20, 2012·0 cites·37 claims
- 3341US2008042145A1Diffusion barrier for light emitting diodesHAGLEITNER HELMUT·Filed 2006·Application pending·0 cites
- 3440US9607955B2Contact padMIECZKOWSKI VAN·Filed 2010·Granted Mar 28, 2017·0 cites·15 claims
- 3540US2006006393A1Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devicesWARD ALLAN III·Filed 2004·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Helmut Hagleitner files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →