Inventor · disambiguated record
Youngman Jang
Also filed as: JANG YOUNGMAN
8 granted patents·1 pending application·32 citations·filing 2015–2018
83Inventor score
Top patents by PatentIndex Score
9 records- 0196US9825216B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·11 cites·11 claims
- 0289US10147873B2Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the sameLEE JOONMYOUNG·Filed 2018·Granted Dec 4, 2018·6 cites·20 claims
- 0386US9761795B2Method and processing apparatus for fabricating a magnetic resistive random access memory devicePARK YONGSUNG·Filed 2016·Granted Sep 12, 2017·6 cites·15 claims
- 0483US9905753B2Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the sameLEE JOONMYOUNG·Filed 2016·Granted Feb 27, 2018·6 cites·20 claims
- 0578US10003011B2Magnetic memory devices and methods for manufacturing the samePARK SANG HWAN·Filed 2017·Granted Jun 19, 2018·3 cites·20 claims
- 0669US10483456B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 19, 2019·0 cites·20 claims
- 0766US10153422B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 11, 2018·0 cites·19 claims
- 0846US9570673B2Method and processing apparatus for fabricating a magnetic resistive random access memory devicePARK YONGSUNG·Filed 2015·Granted Feb 14, 2017·0 cites·20 claims
- 0932US2017092848A1Magnetic memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →