Inventor · disambiguated record
Kenji Shimoyama
Also filed as: SHIMOYAMA KENJI
32 granted patents·8 pending applications·458 citations·filing 1989–2021
97Inventor score
Files withMITSUBISHI CHEM CORP21MITSUBISHI CHEM IND6BANDO CHEMICAL IND5UNIV TOHOKU3SEOUL VIOSYS CO LTD2
Top patents by PatentIndex Score
40 records- 0192US5804834ASemiconductor device having contact resistance reducing layerMITSUBISHI CHEM CORP·Filed 1997·Granted Sep 8, 1998·104 cites·12 claims
- 0287US9362449B2High efficiency light emitting diode and method of fabricating the sameSEOUL VIOSYS CO LTD·Filed 2014·Granted Jun 7, 2016·5 cites·18 claims
- 0387US4902356AEpitaxial substrate for high-intensity led, and method of manufacturing sameMITSUBISHI MONSANTO CHEM·Filed 1989·Granted Feb 20, 1990·75 cites·9 claims
- 0480US7794541B2Gallium nitride-based material and method of manufacturing the sameUNIV TOHOKU·Filed 2007·Granted Sep 14, 2010·7 cites·18 claims
- 0579US6707071B2Semiconductor light-emitting deviceMITSUBISHI CHEM CORP·Filed 2002·Granted Mar 16, 2004·14 cites·13 claims
- 0674US6807213B1Semiconductor optical device apparatusMITSUBISHI CHEM CORP·Filed 2000·Granted Oct 19, 2004·29 cites·53 claims
- 0774US6387721B1Semiconductor light-emitting device and manufacturing method for the sameMITSUBISHI CHEM CORP·Filed 1999·Granted May 14, 2002·34 cites·8 claims
- 0873US5619518ASemiconductor laser diodeMITSUBISHI CHEM CORP·Filed 1994·Granted Apr 8, 1997·32 cites·21 claims
- 0970US9783708B2Conductive pasteBANDO CHEMICAL IND·Filed 2013·Granted Oct 10, 2017·2 cites·12 claims
- 1067US6278137B1Semiconductor light-emitting devicesMITSUBISHI CHEM CORP·Filed 1998·Granted Aug 21, 2001·36 cites·8 claims
- 1163US9853182B2Gallium nitride-based light emitting diodeSEOUL VIOSYS CO LTD·Filed 2014·Granted Dec 26, 2017·1 cites·14 claims
- 1263US9257595B2Nitride light-emitting diode element and method of manufacturing sameMITSUBISHI CHEM CORP·Filed 2013·Granted Feb 9, 2016·2 cites·7 claims
- 1359US12288686B2GaN substrate wafer and method for manufacturing sameMITSUBISHI CHEM CORP·Filed 2021·Granted Apr 29, 2025·0 cites·33 claims
- 1458US5811839ASemiconductor light-emitting devicesMITSUBISHI CHEM CORP·Filed 1995·Granted Sep 22, 1998·22 cites·18 claims
- 1556US5355384ASemiconductor laser elementMITSUBISHI CHEM IND·Filed 1993·Granted Oct 11, 1994·16 cites·12 claims
- 1654US6265733B1Semiconductor device and method for manufacturing the sameMITSUBISHI CHEM CORP·Filed 1997·Granted Jul 24, 2001·15 cites·16 claims
- 1752US6744066B2Semiconductor device and method for manufacturing the sameMITSUBISHI CHEM CORP·Filed 2001·Granted Jun 1, 2004·3 cites·25 claims
- 1851US9365592B2Bonding compositionBANDO CHEMICAL IND·Filed 2013·Granted Jun 14, 2016·0 cites·14 claims
- 1951US2016121432A1Composition for metal bondingBANDO CHEMICAL IND·Filed 2014·Application pending·0 cites
- 2050US11027398B2Grinding material and production method of grinding materialBANDO CHEMICAL IND·Filed 2016·Granted Jun 8, 2021·0 cites·5 claims
- 2148US5868834AMethod of manufacturing a group II-VI compound semiconductorMITSUBISHI CHEM IND·Filed 1997·Granted Feb 9, 1999·14 cites·12 claims
- 2246US6589807B2Semiconductor device and method for manufacturing the sameMITSUBISHI CHEM CORP·Filed 2001·Granted Jul 8, 2003·1 cites·7 claims
- 2344US2010162945A1Gallium nitride-based material and method of manufacturing the sameUNIV TOHOKU·Filed 2010·Application pending·0 cites
- 2444US2010140536A1Gallium nitride-based materialUNIV TOHOKU·Filed 2010·Application pending·0 cites
- 2543US2004041162A1Semiconductor light-emitting deviceMITSUBISHI CHEM CORP·Filed 2003·Application pending·0 cites
- 2642US5018159ADivided electrode type semiconductor laser deviceAGENCY IND SCIENCE TECHN·Filed 1989·Granted May 21, 1991·5 cites·4 claims
- 2741US2014312285A1Composition for bondingBANDO CHEMICAL IND·Filed 2012·Application pending·0 cites
- 2841US2005230672A1III-V compound semiconductor crystalsMITSUBISHI CHEM CORP·Filed 2005·Application pending·0 cites
- 2940US5400740AMethod of preparing compound semiconductorMITSUBISHI CHEM CORP·Filed 1993·Granted Mar 28, 1995·11 cites·5 claims
- 3039US2015125980A1Method for producing m-plane nitride-based light-emitting diodeMITSUBISHI CHEM CORP·Filed 2014·Application pending·0 cites
- 3138US2012112320A1Nitride semiconductor crystal and production process thereofKUBO SHUICHI·Filed 2011·Application pending·0 cites
- 3237US5827365ACompound semiconductor and its fabricationMITSUBISHI CHEM IND·Filed 1995·Granted Oct 27, 1998·6 cites·15 claims
- 3336US6639926B1Semiconductor light-emitting deviceMITSUBISHI CHEM CORP·Filed 1999·Granted Oct 28, 2003·5 cites·25 claims
- 3435US5622559AMethod of preparing compound semiconductorMITSUBISHI CHEM CORP·Filed 1993·Granted Apr 22, 1997·7 cites·11 claims
- 3533US5376581AFabrication of semiconductor laser elementsMITSUBISHI CHEM IND·Filed 1993·Granted Dec 27, 1994·3 cites·5 claims
- 3632US5145807AMethod of making semiconductor laser devicesMITSUBISHI CHEM IND·Filed 1990·Granted Sep 8, 1992·3 cites·4 claims
- 3731US6023483ASemiconductor light-emitting deviceMITSUBISHI CHEM CORP·Filed 1998·Granted Feb 8, 2000·2 cites·18 claims
- 3831US5608751ALaser diode and process for producing the sameMITSUBISHI CHEM CORP·Filed 1994·Granted Mar 4, 1997·2 cites·16 claims
- 3931US5606180AIII-V compound semiconductor with high crystal quality and luminous efficiencyMITSUBISHI CHEM CORP·Filed 1994·Granted Feb 25, 1997·2 cites·8 claims
- 4030US4969151ASemiconductor laser devicesMITSUBISHI CHEM IND·Filed 1989·Granted Nov 6, 1990·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →