Inventor · disambiguated record
Wataru Sekine
Also filed as: SEKINE WATARU
11 granted patents·1 pending application·162 citations·filing 2007–2016
90Inventor score
Top patents by PatentIndex Score
12 records- 0196US8963148B2Semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Feb 24, 2015·29 cites·20 claims
- 0296US8013360B2Semiconductor device having a junction of P type pillar region and N type pillar regionTOSHIBA KK·Filed 2010·Granted Sep 6, 2011·29 cites·8 claims
- 0395US9252283B2Semiconductor device comprising oxide semiconductor filmSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Feb 2, 2016·21 cites·15 claims
- 0495US7737469B2Semiconductor device having superjunction structure formed of p-type and n-type pillar regionsTOSHIBA KK·Filed 2007·Granted Jun 15, 2010·36 cites·9 claims
- 0590US7919824B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Apr 5, 2011·17 cites·14 claims
- 0684US7989910B2Semiconductor device including a resurf region with forward tapered teethTOSHIBA KK·Filed 2008·Granted Aug 2, 2011·11 cites·18 claims
- 0782US7622771B2Semiconductor apparatusTOSHIBA KK·Filed 2008·Granted Nov 24, 2009·10 cites·20 claims
- 0878US10074748B2Semiconductor device comprising oxide semiconductor filmSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Sep 11, 2018·2 cites·11 claims
- 0968US8283720B2Power semiconductor deviceSAITO WATARU·Filed 2008·Granted Oct 9, 2012·5 cites·20 claims
- 1057US8610210B2Power semiconductor device and method for manufacturing sameOHTA HIROSHI·Filed 2010·Granted Dec 17, 2013·1 cites·11 claims
- 1157US8030706B2Power semiconductor deviceTOSHIBA KK·Filed 2009·Granted Oct 4, 2011·1 cites·19 claims
- 1239US2012056101A1Ion doping apparatus and ion doping methodKIKUCHI ERUMU·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →