Inventor · disambiguated record
Hans-Jürgen Thees
Also filed as: THEES HANS-JUERGEN · THEES HANS-JURGEN · THEES HANS-JÜRGEN
6 granted patents·6 pending applications·20 citations·filing 2011–2025
77Inventor score
Files withGLOBALFOUNDRIES INC5INFINEON TECHNOLOGIES AG4GLOBALFOUNDRIES US INC1RICHTER RALF1THEES HANS-JUERGEN1
Top patents by PatentIndex Score
12 records- 0194US9806170B1Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOIGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 31, 2017·12 cites·7 claims
- 0282US10522655B2Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOIGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 31, 2019·3 cites·7 claims
- 0376US9324868B2Epitaxial growth of silicon for FinFETS with non-rectangular cross-sectionsGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 26, 2016·3 cites·13 claims
- 0464US8906801B2Processes for forming integrated circuits and integrated circuits formed therebyRICHTER RALF·Filed 2012·Granted Dec 9, 2014·2 cites·19 claims
- 0562US11217678B2Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOIGLOBALFOUNDRIES US INC·Filed 2019·Granted Jan 4, 2022·0 cites·20 claims
- 0661US2025113512A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 0761US2025113583A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 0852US2024030323A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 0951US2025301732A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 1039US10418364B2Semiconductor device structure with self-aligned capacitor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 17, 2019·0 cites·10 claims
- 1136US2013189821A1Methods for fabricating semiconductor devices with reduced damage to shallow trench isolation (sti) regionsTHEES HANS-JUERGEN·Filed 2012·Application pending·0 cites
- 1235US2013037866A1Method of forming a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2011·Application pending·0 cites
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