Inventor · disambiguated record
Ju-Ai Ruan
Also filed as: RUAN JU-AI
7 granted patents·4 pending applications·18 citations·filing 2000–2013
78Inventor score
Top patents by PatentIndex Score
11 records- 0175US7995263B1Transmission and reflection dual operational mode light processing deviceRUAN JU-AI·Filed 2008·Granted Aug 9, 2011·10 cites·15 claims
- 0258US9052507B1Micro-electro-mechanical motion transducerRUAN JU-AI·Filed 2013·Granted Jun 9, 2015·1 cites·10 claims
- 0358US7727885B2Reduction of punch-thru defects in damascene processingTEXAS INSTRUMENTS INC·Filed 2006·Granted Jun 1, 2010·1 cites·23 claims
- 0457US7732324B2Semiconductor device having improved adhesion and reduced blistering between etch stop layer and dielectric layerTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 8, 2010·1 cites·25 claims
- 0555US7745335B2Semiconductor device manufactured by reducing hillock formation in metal interconnectsTEXAS INSTRUMENTS INC·Filed 2006·Granted Jun 29, 2010·1 cites·10 claims
- 0649US6686283B1Shallow trench isolation planarization using self aligned isotropic etchTEXAS INSTRUMENTS INC·Filed 2000·Granted Feb 3, 2004·4 cites·34 claims
- 0748US2006194447A1Plasma Treatment of an Etch Stop LayerTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 0840US2006081965A1Plasma treatment of an etch stop layerRUAN JU-AI·Filed 2004·Application pending·0 cites
- 0937US2005241672A1Extraction of impurities in a semiconductor process with a supercritical fluidTEXAS INSTRUMENTS INC·Filed 2004·Application pending·0 cites
- 1031US6790777B2Method for reducing contamination, copper reduction, and depositing a dielectric layer on a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 14, 2004·0 cites·47 claims
- 1131US2003162403A1Method to eliminate antenna damage in semiconductor processingFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →