Inventor · disambiguated record
Takahiro Sonoyama
Also filed as: SONOYAMA TAKAHIRO
6 granted patents·2 pending applications·16 citations·filing 2008–2017
74Inventor score
Files withTOYODA GOSEI KK8
Top patents by PatentIndex Score
8 records- 0189US9508822B2Semiconductor deviceTOYODA GOSEI KK·Filed 2014·Granted Nov 29, 2016·13 cites·25 claims
- 0278US9691846B2Semiconductor device including an insulating layer which includes negatively charged microcrystalTOYODA GOSEI KK·Filed 2015·Granted Jun 27, 2017·2 cites·16 claims
- 0358US9793369B2MIS-type semiconductor deviceTOYODA GOSEI KK·Filed 2015·Granted Oct 17, 2017·1 cites·16 claims
- 0454US10026808B2Semiconductor device including insulating film that includes negatively charged microcrystalTOYODA GOSEI KK·Filed 2017·Granted Jul 17, 2018·0 cites·13 claims
- 0547US10074728B2Semiconductor deviceTOYODA GOSEI KK·Filed 2016·Granted Sep 11, 2018·0 cites·11 claims
- 0641US9299567B2Manufacturing method of MIS-type semiconductor device, including heating a zirconium oxynitride (ZrON) layerTOYODA GOSEI KK·Filed 2014·Granted Mar 29, 2016·0 cites·17 claims
- 0741US2009001384A1Group III Nitride semiconductor HFET and method for producing the sameTOYODA GOSEI KK·Filed 2008·Application pending·0 cites
- 0837US2013161765A1Mis type semiconductor device and production method thereforTOYODA GOSEI KK·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →