Inventor · disambiguated record
Yasuhiro Uemoto
Also filed as: UEMOTO YASUHIRO
84 granted patents·26 pending applications·1,396 citations·filing 1989–2022
99Inventor score
Files withPANASONIC CORP34MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28MATSUSHITA ELECTRONICS CORP14PANASONIC IP MAN CO LTD6SHIBATA DAISUKE4
Top patents by PatentIndex Score
110 records- 0197US7759700B2Semiconductor devicePANASONIC CORP·Filed 2006·Granted Jul 20, 2010·75 cites·5 claims
- 0297US7576373B1Nitride semiconductor device and method for manufacturing the samePANASONIC CORP·Filed 2006·Granted Aug 18, 2009·62 cites·10 claims
- 0396US7595680B2Bidirectional switch and method for driving the samePANASONIC CORP·Filed 2008·Granted Sep 29, 2009·50 cites·11 claims
- 0496US7375407B2Schottky barrier diode and integrated circuit using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted May 20, 2008·53 cites·11 claims
- 0596US7217960B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted May 15, 2007·36 cites·10 claims
- 0695US8076698B2Transistor and method for operating the sameUEDA DAISUKE·Filed 2006·Granted Dec 13, 2011·42 cites·5 claims
- 0795US7898002B2Nitride semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2007·Granted Mar 1, 2011·30 cites·14 claims
- 0894US7816707B2Field-effect transistor with nitride semiconductor and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Oct 19, 2010·25 cites·14 claims
- 0994US7291872B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Nov 6, 2007·33 cites·14 claims
- 1093US8164115B2Nitride semiconductor deviceHIKITA MASAHIRO·Filed 2011·Granted Apr 24, 2012·15 cites·5 claims
- 1193US7550821B2Nitride semiconductor devicePANASONIC CORP·Filed 2007·Granted Jun 23, 2009·29 cites·11 claims
- 1293US5624864ASemiconductor device having capacitor and manufacturing method thereofMATSUSHITA ELECTRONICS CORP·Filed 1994·Granted Apr 29, 1997·71 cites·1 claims
- 1392US7339207B2Semiconductor device including a group III-V nitride semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Mar 4, 2008·18 cites·12 claims
- 1491US7078743B2Field effect transistor semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jul 18, 2006·45 cites·14 claims
- 1590US8129748B2Nitride semiconductor device and method for fabricating the sameUEMOTO YASUHIRO·Filed 2007·Granted Mar 6, 2012·25 cites·19 claims
- 1690US7859087B2Semiconductor devicePANASONIC CORP·Filed 2009·Granted Dec 28, 2010·14 cites·7 claims
- 1790US7656010B2Semiconductor devicePANASONIC CORP·Filed 2007·Granted Feb 2, 2010·15 cites·5 claims
- 1887US8344463B2Bidirectional switchPANASONIC CORP·Filed 2009·Granted Jan 1, 2013·13 cites·11 claims
- 1987US6441420B1Semiconductor device and method of fabricating the sameMATSUSHITA ELECTRIC CORP·Filed 2000·Granted Aug 27, 2002·29 cites·7 claims
- 2087US6204111B1Fabrication method of capacitor for integrated circuitMATSUSHITA ELECTRONICS CORP·Filed 1999·Granted Mar 20, 2001·60 cites·4 claims
- 2186US6214660B1Capacitor for integrated circuit and its fabrication methodMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Apr 10, 2001·58 cites·3 claims
- 2286US5780351ASemiconductor device having capacitor and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 14, 1998·41 cites·6 claims
- 2385US7825434B2Nitride semiconductor devicePANASONIC CORP·Filed 2006·Granted Nov 2, 2010·8 cites·9 claims
- 2485US6143597AMethod of manufacturing capacitor included in semiconductor device and the capacitor thereofMATSUSHITA ELECTRONICS CORP·Filed 1996·Granted Nov 7, 2000·60 cites·10 claims
- 2584US8344423B2Nitride semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2012·Granted Jan 1, 2013·6 cites·3 claims
- 2684US8203376B2Semiconductor device and method for driving the sameMORITA TATSUO·Filed 2007·Granted Jun 19, 2012·10 cites·57 claims
- 2783US8405126B2Semiconductor deviceSHIBATA DAISUKE·Filed 2011·Granted Mar 26, 2013·7 cites·5 claims
- 2883US8264002B2Field-effect transistorHIKITA MASAHIRO·Filed 2010·Granted Sep 11, 2012·5 cites·3 claims
- 2981US9685549B2Nitride semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2013·Granted Jun 20, 2017·4 cites·11 claims
- 3080US7663161B2Transistor for preventing current collapse and having improved leakage current characteristics and method for fabricating the samePANASONIC CORP·Filed 2007·Granted Feb 16, 2010·8 cites·14 claims
- 3179US7456707B2Resonator and filter using the samePANASONIC CORP·Filed 2005·Granted Nov 25, 2008·10 cites·18 claims
- 3278US5245452AActive matric drive liquid crystal display device using polycrystalline silicon pixel electrodesMATSUSHITA ELECTRONICS CORP·Filed 1989·Granted Sep 14, 1993·45 cites·14 claims
- 3377US8592866B2TransistorYANAGIHARA MANABU·Filed 2006·Granted Nov 26, 2013·8 cites·16 claims
- 3476US8569843B2Semiconductor devicePANASONIC CORP·Filed 2012·Granted Oct 29, 2013·3 cites·11 claims
- 3576US6333528B1Semiconductor device having a capacitor exhibiting improved moisture resistanceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Dec 25, 2001·23 cites·2 claims
- 3675USRE41368EHigh voltage SOI semiconductor devicePANASONIC CORP·Filed 2005·Granted Jun 8, 2010·6 cites·20 claims
- 3774US9859413B2Nitride semiconductor device and method of manufacturing the samePANASONIC IP MAN CO LTD·Filed 2017·Granted Jan 2, 2018·2 cites·12 claims
- 3874US7612426B2Schottky barrier diode and diode arrayPANASONIC CORP·Filed 2005·Granted Nov 3, 2009·4 cites·28 claims
- 3973US8299737B2Motor driving circuitMORITA TATSUO·Filed 2008·Granted Oct 30, 2012·12 cites·14 claims
- 4073US6320214B1Semiconductor device having a ferroelectric TFT and a dummy elementMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Nov 20, 2001·24 cites·5 claims
- 4173US5661319ASemiconductor device having capacitorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Aug 26, 1997·35 cites·10 claims
- 4271US8497553B2Semiconductor deviceYAMAGIWA HIROTO·Filed 2010·Granted Jul 30, 2013·4 cites·18 claims
- 4371US7605441B2Semiconductor devicePANASONIC CORP·Filed 2007·Granted Oct 20, 2009·4 cites·23 claims
- 4471US5929475ACapacitor for integrated circuit and its fabrication methodMATSUSHITA ELECTRONICS CORP·Filed 1995·Granted Jul 27, 1999·26 cites·2 claims
- 4570US6756282B2Semiconductor device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jun 29, 2004·10 cites·5 claims
- 4670US6531738B1High voltage SOI semiconductor deviceMATSUSHITA ELECTRICINDUSTRIAL·Filed 2000·Granted Mar 11, 2003·18 cites·20 claims
- 4769US5717233ASemiconductor device having capacitior and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Feb 10, 1998·25 cites·11 claims
- 4868US7528423B2Semiconductor devicePANASONIC CORP·Filed 2007·Granted May 5, 2009·3 cites·5 claims
- 4967US9293574B2Semiconductor device and method of manufacturing semiconductor devicePANASONIC CORP·Filed 2014·Granted Mar 22, 2016·2 cites·14 claims
- 5067US6174822B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Jan 16, 2001·24 cites·17 claims
Showing the top 50 of 110 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →