Inventor · disambiguated record
Dae-Joong Won
Also filed as: WON DAE-JOONG
4 granted patents·1 pending application·7 citations·filing 2004–2012
66Inventor score
Top patents by PatentIndex Score
5 records- 0167US7534708B2Recessed-type field effect transistor with reduced body effectSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·2 cites·20 claims
- 0253US8124512B2Methods of forming integrated circuit devices having different gate electrode cross sectionsWON DAE-JOONG·Filed 2009·Granted Feb 28, 2012·2 cites·4 claims
- 0346US7300845B2Method of manufacturing recess type MOS transistor having a dual diode impurity layer structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 27, 2007·3 cites·39 claims
- 0446US2005173744A1Recessed-type field effect transistor with reduced body effectFiled 2005·Application pending·0 cites
- 0539US8710594B2Integrated circuit devices having conductive structures with different cross sectionsWON DAE-JOONG·Filed 2012·Granted Apr 29, 2014·0 cites·11 claims
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