Inventor · disambiguated record
Craig T. Swift
Also filed as: SWIFT CRAIG · SWIFT CRAIG T · SWIFT CRAIG THOMAS
50 granted patents·896 citations·filing 1995–2015
98Inventor score
Files withFREESCALE SEMICONDUCTOR INC37MOTOROLA INC9PERERA ASANGA H2ADETUTU OLUBUNMI O1WINSTEAD BRIAN A1
Top patents by PatentIndex Score
50 records- 0196US7544980B2Split gate memory cell in a FinFETFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jun 9, 2009·43 cites·20 claims
- 0296US6706599B1Multi-bit non-volatile memory device and method thereforMOTOROLA INC·Filed 2003·Granted Mar 16, 2004·127 cites·33 claims
- 0393US5824584AMethod of making and accessing split gate memory deviceMOTOROLA INC·Filed 1997·Granted Oct 20, 1998·97 cites·14 claims
- 0492US7250340B2Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trenchFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 31, 2007·24 cites·20 claims
- 0592US6887758B2Non-volatile memory device and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 3, 2005·70 cites·29 claims
- 0692US6791883B2Program and erase in a thin film storage non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 14, 2004·66 cites·38 claims
- 0789US6713812B1Non-volatile memory device having an anti-punch through (APT) regionMOTOROLA INC·Filed 2002·Granted Mar 30, 2004·48 cites·21 claims
- 0887US7226840B2Process for forming an electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 5, 2007·15 cites·20 claims
- 0987US6232634B1Non-volatile memory cell and method for manufacturing sameMOTOROLA INC·Filed 1998·Granted May 15, 2001·60 cites·20 claims
- 1086US9508397B1Non-volatile memory (NVM) with endurance controlFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Nov 29, 2016·8 cites·19 claims
- 1185US7205608B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 17, 2007·12 cites·19 claims
- 1285US6751125B2Gate voltage reduction in a memory readFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jun 15, 2004·37 cites·38 claims
- 1383US7592224B2Method of fabricating a storage device including decontinuous storage elements within and between trenchesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Sep 22, 2009·10 cites·20 claims
- 1482US7399675B2Electronic device including an array and process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 15, 2008·16 cites·11 claims
- 1581US7619270B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 17, 2009·9 cites·20 claims
- 1679US7314798B2Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programmingFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 1, 2008·8 cites·20 claims
- 1779US5981340AMethod of building an EPROM cell without drain disturb and reduced select gate resistanceMOTOROLA INC·Filed 1997·Granted Nov 9, 1999·38 cites·11 claims
- 1878US6964902B2Method for removing nanoclusters from selected regionsFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 15, 2005·20 cites·26 claims
- 1978US6855979B2Multi-bit non-volatile memory device and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Feb 15, 2005·21 cites·6 claims
- 2077US7195983B2Programming, erasing, and reading structure for an NVM cellFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Mar 27, 2007·21 cites·27 claims
- 2176US9136360B1Methods and structures for charge storage isolation in split-gate memory arraysPERERA ASANGA H·Filed 2014·Granted Sep 15, 2015·4 cites·18 claims
- 2274US5605855AProcess for fabricating a graded-channel MOS deviceMOTOROLA INC·Filed 1995·Granted Feb 25, 1997·50 cites·9 claims
- 2372US7285819B2Nonvolatile storage array with continuous control gate employing hot carrier injection programmingFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 23, 2007·5 cites·9 claims
- 2471US9105748B1Integration of a non-volatile memory (NVM) cell and a logic transistor and method thereforPERERA ASANGA H·Filed 2014·Granted Aug 11, 2015·3 cites·20 claims
- 2570US7394686B2Programmable structure including discontinuous storage elements and spacer control gates in a trenchFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 1, 2008·4 cites·20 claims
- 2669US7582929B2Electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 1, 2009·4 cites·15 claims
- 2766US6108263AMemory system, method for verifying data stored in a memory system after a write cycle and method for writing to a memory systemMOTOROLA INC·Filed 1999·Granted Aug 22, 2000·25 cites·20 claims
- 2865US7619275B2Process for forming an electronic device including discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 17, 2009·3 cites·20 claims
- 2964US9236498B1Low resistance polysilicon strapFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jan 12, 2016·2 cites·10 claims
- 3063US7679125B2Back-gated semiconductor device with a storage layer and methods for forming thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 16, 2010·2 cites·14 claims
- 3162US7317222B2Memory cell using a dielectric having non-uniform thicknessFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jan 8, 2008·2 cites·22 claims
- 3261US10109356B2Method and apparatus for stressing a non-volatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 23, 2018·2 cites·20 claims
- 3357US6295229B1Semiconductor device and method of operating itMOTOROLA INC·Filed 1999·Granted Sep 25, 2001·17 cites·12 claims
- 3456US9425055B2Split gate memory cell with a layer of nanocrystals with improved erase performanceWINSTEAD BRIAN A·Filed 2014·Granted Aug 23, 2016·1 cites·15 claims
- 3555US7105395B2Programming and erasing structure for an NVM cellFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Sep 12, 2006·6 cites·25 claims
- 3653US7183161B2Programming and erasing structure for a floating gate memory cell and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Feb 27, 2007·4 cites·28 claims
- 3749US7745870B2Programming and erasing structure for a floating gate memory cell and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 29, 2010·0 cites·5 claims
- 3848US6898129B2Erase of a memory having a non-conductive storage mediumFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 24, 2005·5 cites·23 claims
- 3946US7391659B2Method for multiple step programming a memory cellFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jun 24, 2008·0 cites·20 claims
- 4044US9419088B2Low resistance polysilicon strapFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Aug 16, 2016·0 cites·10 claims
- 4144US7563681B2Double-gated non-volatile memory and methods for forming thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jul 21, 2009·0 cites·16 claims
- 4243US9728410B2Split-gate non-volatile memory (NVM) cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Aug 8, 2017·0 cites·14 claims
- 4343US7094645B2Programming and erasing structure for a floating gate memory cell and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 22, 2006·1 cites·23 claims
- 4443US6847548B2Memory with multiple state cells and sensing methodFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jan 25, 2005·3 cites·30 claims
- 4541US7518179B2Virtual ground memory array and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Apr 14, 2009·3 cites·14 claims
- 4640US8435898B2First inter-layer dielectric stack for non-volatile memoryADETUTU OLUBUNMI O·Filed 2007·Granted May 7, 2013·0 cites·17 claims
- 4739US7842573B2Virtual ground memory array and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Nov 30, 2010·0 cites·13 claims
- 4838US9293207B1Embedded data and code non-volatile memory cell configurationsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Mar 22, 2016·0 cites·20 claims
- 4937US7160775B2Method of discharging a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 9, 2007·0 cites·11 claims
- 5029US5966619AProcess for forming a semiconductor device having a conductive member that protects field isolation during etchingMOTOROLA INC·Filed 1996·Granted Oct 12, 1999·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →