Inventor · disambiguated record
Wilbur G. Catabay
Also filed as: CATABAY WILBUR · CATABAY WILBUR G
70 granted patents·11 pending applications·2,365 citations·filing 1995–2010
99Inventor score
Top patents by PatentIndex Score
81 records- 0196US6423628B1Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal linesLSI LOGIC CORP·Filed 1999·Granted Jul 23, 2002·218 cites·11 claims
- 0295US6028015AProcess for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorptionLSI LOGIC CORP·Filed 1999·Granted Feb 22, 2000·173 cites·14 claims
- 0394US6204192B1Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structuresLSI LOGIC CORP·Filed 1999·Granted Mar 20, 2001·166 cites·17 claims
- 0494US5933757AEtch process selective to cobalt silicide for formation of integrated circuit structuresLSI LOGIC CORP·Filed 1997·Granted Aug 3, 1999·265 cites·19 claims
- 0593US6881664B2Process for planarizing upper surface of damascene wiring structure for integrated circuit structuresLSI LOGIC CORP·Filed 2003·Granted Apr 19, 2005·75 cites·16 claims
- 0693US6727177B1Multi-step process for forming a barrier film for use in copper layer formationLSI LOGIC CORP·Filed 2001·Granted Apr 27, 2004·58 cites·21 claims
- 0793US6537896B1Process for treating porous low k dielectric material in damascene structure to form a non-porous dielectric diffusion barrier on etched via and trench surfaces in the porous low k dielectric materialLSI LOGIC CORP·Filed 2001·Granted Mar 25, 2003·71 cites·6 claims
- 0891US6423630B1Process for forming low K dielectric material between metal linesLSI LOGIC CORP·Filed 2000·Granted Jul 23, 2002·66 cites·20 claims
- 0991US6350700B1Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structureLSI LOGIC CORP·Filed 2000·Granted Feb 26, 2002·59 cites·28 claims
- 1090US6528423B1Process for forming composite of barrier layers of dielectric material to inhibit migration of copper from copper metal interconnect of integrated circuit structure into adjacent layer of low k dielectric materialLSI LOGIC CORP·Filed 2001·Granted Mar 4, 2003·48 cites·16 claims
- 1190US6368979B1Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structureLSI LOGIC CORP·Filed 2000·Granted Apr 9, 2002·52 cites·26 claims
- 1290US6346490B1Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning stepsLSI LOGIC CORP·Filed 2000·Granted Feb 12, 2002·53 cites·20 claims
- 1389US5902129AProcess for forming improved cobalt silicide layer on integrated circuit structure using two capping layersLSI LOGIC CORP·Filed 1997·Granted May 11, 1999·87 cites·20 claims
- 1489US5660682APlasma clean with hydrogen gasLSI LOGIC CORP·Filed 1996·Granted Aug 26, 1997·100 cites·18 claims
- 1588US6232658B1Process to prevent stress cracking of dielectric films on semiconductor wafersLSI LOGIC CORP·Filed 1999·Granted May 15, 2001·93 cites·20 claims
- 1687US6939800B1Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structuresLSI LOGIC CORP·Filed 2002·Granted Sep 6, 2005·30 cites·7 claims
- 1786US7427563B2Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structuresLSI CORP·Filed 2005·Granted Sep 23, 2008·9 cites·6 claims
- 1886US6503840B2Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoningLSI LOGIC CORP·Filed 2001·Granted Jan 7, 2003·40 cites·20 claims
- 1984US7393780B2Dual layer barrier film techniques to prevent resist poisoningLSI CORP·Filed 2006·Granted Jul 1, 2008·7 cites·6 claims
- 2084US5926720AConsistent alignment mark profiles on semiconductor wafers using PVD shadowingLSI LOGIC CORP·Filed 1997·Granted Jul 20, 1999·64 cites·16 claims
- 2183US6492731B1Composite low dielectric constant film for integrated circuit structureLSI LOGIC CORP·Filed 2000·Granted Dec 10, 2002·27 cites·21 claims
- 2282US7413984B2Multi-step process for forming a barrier film for use in copper layer formationLSI CORP·Filed 2007·Granted Aug 19, 2008·6 cites·6 claims
- 2381US6391795B1Low k dielectric composite layer for intergrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoningLSI LOGIC CORP·Filed 1999·Granted May 21, 2002·53 cites·14 claims
- 2480US6812134B1Dual layer barrier film techniques to prevent resist poisoningLSI LOGIC CORP·Filed 2001·Granted Nov 2, 2004·19 cites·13 claims
- 2579US7276441B1Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structuresLSI LOGIC CORP·Filed 2003·Granted Oct 2, 2007·20 cites·20 claims
- 2679US6774057B1Method and structure for forming dielectric layers having reduced dielectric constantsLSI LOGIC CORP·Filed 2002·Granted Aug 10, 2004·22 cites·18 claims
- 2779US5770520AMethod of making a barrier layer for via or contact opening of integrated circuit structureLSI LOGIC CORP·Filed 1996·Granted Jun 23, 1998·57 cites·21 claims
- 2877US6875693B1Via and metal line interface capable of reducing the incidence of electro-migration induced voidsLSI LOGIC CORP·Filed 2003·Granted Apr 5, 2005·21 cites·17 claims
- 2976US8043968B2Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structuresLSI LOGIC CORP·Filed 2010·Granted Oct 25, 2011·3 cites·11 claims
- 3075US7646077B2Methods and structure for forming copper barrier layers integral with semiconductor substrates structuresLSI CORP·Filed 2008·Granted Jan 12, 2010·3 cites·22 claims
- 3173US6858531B1Electro chemical mechanical polishing methodLSI LOGIC CORP·Filed 2002·Granted Feb 22, 2005·13 cites·27 claims
- 3272US7675177B1Forming copper interconnects with Sn coatingsLSI CORP·Filed 2005·Granted Mar 9, 2010·3 cites·17 claims
- 3371US6800940B2Low k dielectric composite layer for integrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoningLSI LOGIC CORP·Filed 2002·Granted Oct 5, 2004·12 cites·5 claims
- 3471US6790784B2Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for intergrated circuit structureLSI LOGIC CORP·Filed 2003·Granted Sep 14, 2004·12 cites·13 claims
- 3571US5994775AMetal-filled via/contact opening with thin barrier layers in integrated circuit structure for fast response, and process for making sameLSI LOGIC CORP·Filed 1997·Granted Nov 30, 1999·39 cites·15 claims
- 3670US7220362B2Planarization with reduced dishingLSI CORP·Filed 2006·Granted May 22, 2007·2 cites·5 claims
- 3770US6756674B1Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making sameLSI LOGIC CORP·Filed 1999·Granted Jun 29, 2004·36 cites·24 claims
- 3869US7956401B2Bi-axial texturing of high-K dielectric films to reduce leakage currentsLSI CORP·Filed 2009·Granted Jun 7, 2011·2 cites·34 claims
- 3969US6930056B1Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structureLSI LOGIC CORP·Filed 2001·Granted Aug 16, 2005·10 cites·10 claims
- 4068US7229923B2Multi-step process for forming a barrier film for use in copper layer formationLSI CORP·Filed 2004·Granted Jun 12, 2007·9 cites·26 claims
- 4168US6472314B1Diamond barrier layerLSI LOGIC CORP·Filed 2001·Granted Oct 29, 2002·12 cites·16 claims
- 4264US7312127B2Incorporating dopants to enhance the dielectric properties of metal silicatesLSI CORP·Filed 2006·Granted Dec 25, 2007·1 cites·9 claims
- 4364US6905909B2Ultra low dielectric constant thin filmLSI LOGIC CORP·Filed 2003·Granted Jun 14, 2005·7 cites·12 claims
- 4463US7285145B1Electro chemical mechanical polishing method and device for planarizing semiconductor surfacesLSI CORP·Filed 2004·Granted Oct 23, 2007·7 cites·18 claims
- 4563US5956613AMethod for improvement of TiN CVD film qualityLSI LOGIC CORP·Filed 1995·Granted Sep 21, 1999·27 cites·13 claims
- 4662US6686272B1Anti-reflective coatings for use at 248 nm and 193 nmLSI LOGIC CORP·Filed 2001·Granted Feb 3, 2004·20 cites·11 claims
- 4761US6884720B1Forming copper interconnects with Sn coatingsLSI LOGIC CORP·Filed 2003·Granted Apr 26, 2005·6 cites·14 claims
- 4861US6613665B1Process for forming integrated circuit structure comprising layer of low k dielectric material having antireflective properties in an upper surfaceLSI LOGIC CORP·Filed 2001·Granted Sep 2, 2003·7 cites·19 claims
- 4961US6297555B1Method to obtain a low resistivity and conformity chemical vapor deposition titanium filmLSI LOGIC CORP·Filed 1998·Granted Oct 2, 2001·22 cites·34 claims
- 5060US7728433B2Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structuresLSI CORP·Filed 2007·Granted Jun 1, 2010·1 cites·14 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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