Inventor · disambiguated record
Ching-Wen Cho
Also filed as: CHO CHING-WEN
10 granted patents·354 citations·filing 1997–2002
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG10
Top patents by PatentIndex Score
10 records- 0190US6157867AMethod and system for on-line monitoring plasma chamber condition by comparing intensity of certain wavelengthTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 5, 2000·68 cites·14 claims
- 0284US6620683B1Twin-bit memory cell having shared word lines and shared bit-line contacts for electrically erasable and programmable read-only memory (EEPROM) and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 16, 2003·42 cites·25 claims
- 0383US6006764AMethod of stripping photoresist from Al bonding pads that prevents corrosionTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 28, 1999·73 cites·17 claims
- 0475US6682659B1Method for forming corrosion inhibited conductor layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 27, 2004·57 cites·16 claims
- 0575US6660624B2Method for reducing fluorine induced defects on a bonding pad surfaceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 9, 2003·20 cites·20 claims
- 0670US6071826AMethod of manufacturing CMOS image sensor leakage free with double layer spacerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 6, 2000·38 cites·37 claims
- 0769US6627475B1Buried photodiode structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Sep 30, 2003·15 cites·34 claims
- 0869US6380030B1Implant method for forming Si3N4 spacerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 30, 2002·25 cites·15 claims
- 0958US6624466B2Implant method for forming Si3N4 spacerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 23, 2003·7 cites·3 claims
- 1040US6077776APolysilicon residue free process by thermal treatmentTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 20, 2000·9 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →