Inventor · disambiguated record
Heung-Soo Im
Also filed as: IM HEUNG-SOO
19 granted patents·652 citations·filing 1995–2008
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD19
Top patents by PatentIndex Score
19 records- 0197US6996014B2Memory devices with page buffer having dual registers and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 7, 2006·58 cites·23 claims
- 0297US6671204B2Nonvolatile memory device with page buffer having dual registers and methods of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 30, 2003·195 cites·22 claims
- 0394US7042770B2Memory devices with page buffer having dual registers and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 9, 2006·66 cites·19 claims
- 0486US5856748ASensing amplifier with current mirrorSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jan 5, 1999·63 cites·23 claims
- 0583US6724682B2Nonvolatile semiconductor memory device having selective multiple-speed operation modeSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 20, 2004·35 cites·20 claims
- 0683US6104668AProgrammable mode register for use in synchronized memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Aug 15, 2000·51 cites·13 claims
- 0779US7227785B2Memory devices with page buffer having dual registers and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 5, 2007·8 cites·8 claims
- 0878US6545910B2Non-volatile semiconductor memory device having word line defect check circuitSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 8, 2003·26 cites·14 claims
- 0977US6018487ARead-only memory device having bit line discharge circuitry and method of reading data from the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 25, 2000·39 cites·20 claims
- 1072US6889268B2Multi-chip system having a continuous burst read mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 3, 2005·17 cites·11 claims
- 1172US5995422ARedundancy circuit and method of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Nov 30, 1999·34 cites·16 claims
- 1264US7602644B2Memory devices with page buffer having dual registers and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·3 cites·12 claims
- 1360US6381187B1Sense amplifier circuit for use in a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 30, 2002·11 cites·19 claims
- 1450US5909405ANonvolatile semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 1, 1999·13 cites·5 claims
- 1548US6603684B2Semiconductor memory device having noise tolerant input bufferSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 5, 2003·5 cites·20 claims
- 1647US5774012ACharge-pumping circuit for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 30, 1998·15 cites·9 claims
- 1745US6087859ACurrent mirror type sense amplifier circuit for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 11, 2000·9 cites·12 claims
- 1844US7787300B2Memory devices with page buffer having dual registers and method of using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·0 cites·2 claims
- 1944US6433590B1Current mirror type sense amplifier circuits for semiconductor memory devices and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Aug 13, 2002·4 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →