Inventor · disambiguated record
Anish A. Khandekar
Also filed as: KHANDEKAR ANISH · KHANDEKAR ANISH A
46 granted patents·3 pending applications·183 citations·filing 2009–2025
97Inventor score
Top patents by PatentIndex Score
49 records- 0198US10446578B1Methods used in forming an array of elevationally-extending strings of memory cells, methods of forming an array of elevationally-extending strings of memory cells, and methods of forming an array of vertical strings of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 15, 2019·36 cites·27 claims
- 0296US10388665B1Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stackMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 20, 2019·46 cites·22 claims
- 0396US10381377B2Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 13, 2019·14 cites·14 claims
- 0496US10297611B1Transistors and arrays of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted May 21, 2019·14 cites·32 claims
- 0596US9893083B1Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 13, 2018·18 cites·20 claims
- 0695US10553607B1Method of forming an array of elevationally-extending strings of programmable memory cells and method of forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 4, 2020·13 cites·26 claims
- 0794US11688808B2Transistor and methods of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 27, 2023·2 cites·13 claims
- 0894US10014311B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 3, 2018·9 cites·15 claims
- 0993US9659949B2Integrated structuresMICRON TECHNOLOGY INC·Filed 2015·Granted May 23, 2017·9 cites·14 claims
- 1091US11264395B1Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 1, 2022·2 cites·24 claims
- 1190US10559466B2Methods of forming a channel region of a transistor and methods used in forming a memory arrayMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 11, 2020·5 cites·6 claims
- 1286US10483407B2Methods of forming si3nX, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 19, 2019·2 cites·28 claims
- 1384US11024736B2Transistor and methods of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 1, 2021·2 cites·14 claims
- 1484US10269819B2Integrated structures and methods of forming vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 23, 2019·3 cites·13 claims
- 1584US2024421226A1Transistor and Methods of Forming Integrated CircuitryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1683US12113130B2Transistor and methods of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1783US11393688B2Semiconductor contact formationMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 19, 2022·1 cites·20 claims
- 1880US12256553B2On-die formation of single-crystal semiconductor structuresMICRON TECHNOLOGY INC·Filed 2023·Granted Mar 18, 2025·0 cites·18 claims
- 1979US12432928B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 30, 2025·0 cites·22 claims
- 2076US2025267876A1On-die formation of single-crystal semiconductor structuresMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2174US11871582B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·0 cites·14 claims
- 2273US11621270B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2021·Granted Apr 4, 2023·0 cites·9 claims
- 2372US11683937B2On-die formation of single-crystal semiconductor structuresMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 20, 2023·0 cites·18 claims
- 2472US8802525B2Methods of forming charge storage structures including etching diffused regions to form recessesSCHRINSKY ALEX·Filed 2011·Granted Aug 12, 2014·3 cites·24 claims
- 2571US11805645B2Integrated assemblies having rugged material fill, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 31, 2023·1 cites·81 claims
- 2670US11600494B2Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 7, 2023·0 cites·21 claims
- 2768US11037797B2Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 15, 2021·0 cites·27 claims
- 2866US7943463B2Methods of semiconductor processing involving forming doped polysilicon on undoped polysiliconMICRON TECHNOLOGY INC·Filed 2009·Granted May 17, 2011·3 cites·18 claims
- 2965US11469103B2Semiconductor structure formationMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 11, 2022·0 cites·20 claims
- 3065US11094705B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 17, 2021·0 cites·15 claims
- 3164US10615174B2Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 7, 2020·0 cites·11 claims
- 3262US10665599B2Integrated structures and methods of forming vertically-stacked memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted May 26, 2020·0 cites·20 claims
- 3361US10665469B2Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted May 26, 2020·0 cites·26 claims
- 3461US10381367B2Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysiliconMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 13, 2019·0 cites·15 claims
- 3560US10971360B2Methods of forming a channel region of a transistor and methods used in forming a memory arrayMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 6, 2021·0 cites·7 claims
- 3660US10121799B2Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 6, 2018·0 cites·12 claims
- 3759US10930499B2Semiconductor structure formationMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 23, 2021·0 cites·9 claims
- 3858US11011538B2Transistors and arrays of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted May 18, 2021·0 cites·56 claims
- 3958US10749041B2Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells manMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 18, 2020·0 cites·17 claims
- 4057US10586807B2Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacksMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 10, 2020·0 cites·14 claims
- 4156US9087737B2Methods of forming charge storage structures including etching diffused regions to form recessesMICRON TECHNOLOGY INC·Filed 2014·Granted Jul 21, 2015·0 cites·19 claims
- 4256US8283708B2Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced widthLIU LEQUN·Filed 2009·Granted Oct 9, 2012·0 cites·17 claims
- 4355US11637175B2Vertical transistorsMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 25, 2023·0 cites·28 claims
- 4453US11387369B2Semiconductor structure formationMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 12, 2022·0 cites·14 claims
- 4552US10937690B2Selective dielectric depositionMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 2, 2021·0 cites·18 claims
- 4651US8709929B2Methods of forming semiconductor devices having diffusion regions of reduced widthLIU LEQUN·Filed 2012·Granted Apr 29, 2014·0 cites·19 claims
- 4751US2018294272A1Methods of tunnel oxide layer formation in 3d nand memory structures and associated devicesINTEL CORP·Filed 2017·Application pending·0 cites
- 4848US12408318B2Semiconductor formation using hybrid oxidationMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 2, 2025·0 cites·14 claims
- 4948US9847340B2Methods of tunnel oxide layer formation in 3D NAND memory structures and associated devicesFAN DARWIN·Filed 2014·Granted Dec 19, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →