Inventor · disambiguated record
Seishi Murakami
Also filed as: MURAKAMI SEISHI
27 granted patents·8 pending applications·1,894 citations·filing 1990–2020
97Inventor score
Files withTOKYO ELECTRON LTD26MURAKAMI SEISHI4MITSUBISHI GAS CHEMICAL CO2FUJITSU LTD1WAKABAYASHI SATOSHI1
Top patents by PatentIndex Score
35 records- 0198US5595606AShower head and film forming apparatus using the sameTOKYO ELECTRON LTD·Filed 1996·Granted Jan 21, 1997·1.2k cites·20 claims
- 0293US5709757AFilm forming and dry cleaning apparatus and methodTOKYO ELECTRON LTD·Filed 1995·Granted Jan 20, 1998·160 cites·63 claims
- 0393US5462603ASemiconductor processing apparatusTOKYO ELECTRON LTD·Filed 1994·Granted Oct 31, 1995·183 cites·13 claims
- 0485US5690743ALiquid material supply apparatus and methodTOKYO ELECTRON LTD·Filed 1995·Granted Nov 25, 1997·79 cites·5 claims
- 0581US5963834AMethod for forming a CVD filmTOKYO ELECTRON LTD·Filed 1997·Granted Oct 5, 1999·62 cites·15 claims
- 0675US10950417B2Substrate processing apparatus and substrate loading mechanismTOKYO ELECTRON LTD·Filed 2018·Granted Mar 16, 2021·2 cites·9 claims
- 0775US5393565AMethod for deposition of a refractory metal nitride and method for formation of a conductive film containing a refractory metal nitrideFUJITSU LTD·Filed 1993·Granted Feb 28, 1995·53 cites·14 claims
- 0871US8106335B2Processing apparatus and heater unitMURAKAMI SEISHI·Filed 2005·Granted Jan 31, 2012·5 cites·11 claims
- 0970US5522412AVacuum treatment apparatus and a cleaning method thereforTOKYO ELECTRON LTD·Filed 1994·Granted Jun 4, 1996·40 cites·21 claims
- 1069US9984892B2Oxide film removing method, oxide film removing apparatus, contact forming method, and contact forming systemTOKYO ELECTRON LTD·Filed 2017·Granted May 29, 2018·1 cites·14 claims
- 1167US5733521AProcess for producing a purified aqueous hydrogen peroxide solutionMITSUBISHI GAS CHEMICAL CO·Filed 1996·Granted Mar 31, 1998·29 cites·9 claims
- 1266US9349642B2Method of forming contact layerTOKYO ELECTRON LTD·Filed 2014·Granted May 24, 2016·1 cites·10 claims
- 1362US10221478B2Film formation deviceTOKYO ELECTRON LTD·Filed 2014·Granted Mar 5, 2019·1 cites·17 claims
- 1462US5704214AApparatus for removing tramp materials and method thereforTOKYO ELECTRON LTD·Filed 1996·Granted Jan 6, 1998·28 cites·5 claims
- 1560US7351291B2Semiconductor processing systemTOKYO ELECTRON LTD·Filed 2003·Granted Apr 1, 2008·7 cites·13 claims
- 1657US6126994ALiquid material supply apparatus and methodTOKYO ELECTRON LTD·Filed 1997·Granted Oct 3, 2000·16 cites·6 claims
- 1756US11965242B2Raw material supply apparatus and raw material supply methodTOKYO ELECTRON LTD·Filed 2020·Granted Apr 23, 2024·0 cites·9 claims
- 1856US8021717B2Film formation method, cleaning method and film formation apparatusTOKYO ELECTRON LTD·Filed 2009·Granted Sep 20, 2011·0 cites·16 claims
- 1955US2009211526A1Processing apparatus using source gas and reactive gasTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 2048US6153515AMethod of forming multilayered filmTOKYO ELECTRON LTD·Filed 1998·Granted Nov 28, 2000·14 cites·33 claims
- 2146US10546753B2Method of removing silicon oxide filmTOKYO ELECTRON LTD·Filed 2018·Granted Jan 28, 2020·0 cites·9 claims
- 2245US6169032B1CVD film formation methodTOKYO ELECTRON LTD·Filed 1998·Granted Jan 2, 2001·11 cites·10 claims
- 2344US11348794B2Semiconductor film forming method using hydrazine-based compound gasTOKYO ELECTRON LTD·Filed 2019·Granted May 31, 2022·0 cites·15 claims
- 2444US9620370B2Method of forming Ti filmTOKYO ELECTRON LTD·Filed 2014·Granted Apr 11, 2017·0 cites·4 claims
- 2544US5456898AMethod for enrichment and purification of aqueous hydrogen peroxide solutionMITSUBISHI GAS CHEMICAL CO·Filed 1994·Granted Oct 10, 1995·8 cites·6 claims
- 2640USRE36925EVacuum treatment apparatus and a method for manufacturing semiconductor device thereinTOKYO ELECTRON LTD·Filed 1998·Granted Oct 31, 2000·7 cites·21 claims
- 2739US2005255241A1Gas supply device and treating deviceTOKYO ELECTRON LTD·Filed 2003·Application pending·0 cites
- 2838US2010162956A1Substrate Processing Apparatus and Substrate Mount Table Used in the ApparatusMURAKAMI SEISHI·Filed 2006·Application pending·0 cites
- 2937US5880526ABarrier metal layerTOKYO ELECTRON LTD·Filed 1997·Granted Mar 9, 1999·6 cites·11 claims
- 3037US2006231032A1Film-forming method and apparatus using plasma CVDMURAKAMI SEISHI·Filed 2005·Application pending·0 cites
- 3137US2006127601A1Film formation methodTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 3236US2002028496A1Method for producing telomerase reverse transcriptaseFiled 2001·Application pending·0 cites
- 3335US2008057344A1Formation of Titanium Nitride FilmMURAKAMI SEISHI·Filed 2004·Application pending·0 cites
- 3434US2005257747A1Worktable device, film formation apparatus, and film formation method for semiconductor processWAKABAYASHI SATOSHI·Filed 2005·Application pending·0 cites
- 3532US5088697AHeat treating apparatusTOKYO ELECTRON LTD·Filed 1990·Granted Feb 18, 1992·7 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →