Inventor · disambiguated record
Sunil Mehta
Also filed as: MEHTA SUNIL · MEHTA SUNIL D
104 granted patents·16 pending applications·3,090 citations·filing 1995–2024
99Inventor score
Files withADVANCED MICRO DEVICES INC42LATTICE SEMICONDUCTOR CORP31VANTIS CORP22MEHTA SUNIL8ANTIGENICS INC2
Top patents by PatentIndex Score
120 records- 0198US6255169B1Process for fabricating a high-endurance non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 3, 2001·268 cites·14 claims
- 0295US6214666B1Method of forming a non-volatile memory deviceVANTIS CORP·Filed 1998·Granted Apr 10, 2001·138 cites·16 claims
- 0393US7078286B1Process for fabricating a semiconductor device having electrically isolated low voltage and high voltage regionsLATTICE SEMICONDUCTOR CORP·Filed 2004·Granted Jul 18, 2006·63 cites·20 claims
- 0493US6282123B1Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cellLATTICE SEMICONDUCTOR CORP·Filed 1998·Granted Aug 28, 2001·109 cites·15 claims
- 0593US6232631B1Floating gate memory cell structure with programming mechanism outside the read pathVANTIS CORP·Filed 1998·Granted May 15, 2001·107 cites·34 claims
- 0693US6064595AFloating gate memory apparatus and method for selected programming thereofVANTIS CORP·Filed 1998·Granted May 16, 2000·123 cites·24 claims
- 0792US5587945ACMOS EEPROM cell with tunneling window in the read pathADVANCED MICRO DEVICES INC·Filed 1995·Granted Dec 24, 1996·108 cites·6 claims
- 0890US6190966B1Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentrationVANTIS CORP·Filed 1997·Granted Feb 20, 2001·76 cites·32 claims
- 0989US6075724AMethod for sorting semiconductor devices having a plurality of non-volatile memory cellsVANTIS CORP·Filed 1999·Granted Jun 13, 2000·73 cites·20 claims
- 1089US5942780AIntegrated circuit having, and process providing, different oxide layer thicknesses on a substrateADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 24, 1999·64 cites·6 claims
- 1189US5672521AMethod of forming multiple gate oxide thicknesses on a wafer substrateADVANCED MICRO DEVICES INC·Filed 1995·Granted Sep 30, 1997·80 cites·24 claims
- 1288US6261944B1Method for forming a semiconductor device having high reliability passivation overlying a multi-level interconnectVANTIS CORP·Filed 1998·Granted Jul 17, 2001·93 cites·23 claims
- 1387US6833602B1Device having electrically isolated low voltage and high voltage regions and process for fabricating the deviceLATTICE SEMICONDUCTOR CORP·Filed 2002·Granted Dec 21, 2004·39 cites·19 claims
- 1487US6028789AZero-power CMOS non-volatile memory cell having an avalanche injection elementVANTIS CORP·Filed 1999·Granted Feb 22, 2000·66 cites·20 claims
- 1586US9090910B2Methods and systems for manipulating particles using a fluidized bedMEHTA SUNIL·Filed 2009·Granted Jul 28, 2015·9 cites·12 claims
- 1686US6600188B1EEPROM with a neutralized doping at tunnel window edgeLATTICE SEMICONDUCTOR CORP·Filed 2002·Granted Jul 29, 2003·41 cites·10 claims
- 1786US6034893ANon-volatile memory cell having dual avalanche injection elementsVANTIS CORP·Filed 1999·Granted Mar 7, 2000·61 cites·20 claims
- 1885US6455912B1Process for manufacturing shallow trenches filled with dielectric material having low mechanical stressVANTIS CORP·Filed 2000·Granted Sep 24, 2002·34 cites·15 claims
- 1985US6297128B1Process for manufacturing shallow trenches filled with dielectric material having low mechanical stressVANTIS CORP·Filed 1999·Granted Oct 2, 2001·65 cites·28 claims
- 2084US5679599AIsolation using self-aligned trench formation and conventional LOCOSADVANCED MICRO DEVICES INC·Filed 1995·Granted Oct 21, 1997·81 cites·28 claims
- 2183US9839920B2Apparatus for manipulating particles using at least one chamber having an inlet and an opposed outletMEHTA SUNIL·Filed 2010·Granted Dec 12, 2017·6 cites·21 claims
- 2283US6274898B1Triple-well EEPROM cell using P-well for tunneling across a channelVANTIS CORP·Filed 1999·Granted Aug 14, 2001·52 cites·20 claims
- 2382US6515899B1Non-volatile memory cell with enhanced cell drive currentLATTICE SEMICONDUCTOR CORP·Filed 2001·Granted Feb 4, 2003·33 cites·23 claims
- 2481US10888878B2Methods, systems and apparatus for manipulating particlesSARTORIUS STEDIM NORTH AMERICA INC·Filed 2017·Granted Jan 12, 2021·1 cites·23 claims
- 2581US6472308B1Borderless vias on bottom metalADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 29, 2002·28 cites·16 claims
- 2681US6009033AMethod of programming and erasing an EEPROM device under an elevated temperature and apparatus thereofADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 28, 1999·44 cites·20 claims
- 2781US2024390915A1Automated device and method to purify biomaterials from a mixture by using magnetic particles and disposable product-contact materialsATHEM LLC·Filed 2024·Application pending·0 cites
- 2880US7309491B2Heat shock protein-based vaccines and immunotherapiesANTIGENICS INC·Filed 2004·Granted Dec 18, 2007·11 cites·47 claims
- 2979US9279133B2Methods and systems for manipulating particles using a fluidized bedMEHTA SUNIL·Filed 2009·Granted Mar 8, 2016·4 cites·14 claims
- 3079US6326663B1Avalanche injection EEPROM memory cell with P-type control gateVANTIS CORP·Filed 1999·Granted Dec 4, 2001·37 cites·23 claims
- 3179US5854114AData retention of EEPROM cell with shallow trench isolation using thicker liner oxideADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 29, 1998·50 cites·14 claims
- 3278US6071784AAnnealing of silicon oxynitride and silicon nitride films to eliminate high temperature charge lossADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 6, 2000·53 cites·31 claims
- 3378US5969992AEEPROM cell using P-well for tunneling across a channelVANTIS CORP·Filed 1998·Granted Oct 19, 1999·42 cites·19 claims
- 3478US5646063AHybrid of local oxidation of silicon isolation and trench isolation for a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 8, 1997·55 cites·20 claims
- 3577US7420037B2Heat shock protein-based vaccines and immunotherapiesANTIGENICS INC·Filed 2004·Granted Sep 2, 2008·7 cites·45 claims
- 3677US6060766AProtection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layersADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·50 cites·1 claims
- 3776US7897448B1Formation of high voltage transistor with high breakdown voltageLATTICE SEMICONDUCTOR CORP·Filed 2008·Granted Mar 1, 2011·8 cites·12 claims
- 3876US6841447B1EEPROM device having an isolation-bounded tunnel capacitor and fabrication processLATTICE SEMICONDUCTOR CORP·Filed 2002·Granted Jan 11, 2005·16 cites·19 claims
- 3975US9292648B1Activity-driven capacitance reduction to reduce dynamic power consumption in an integrated circuitAPPLE INC·Filed 2014·Granted Mar 22, 2016·5 cites·18 claims
- 4074US10208283B2Methods and systems for manipulating particles using a fluidized bedSARTORIUS STEDIM NORTH AMERICA INC·Filed 2016·Granted Feb 19, 2019·1 cites·19 claims
- 4174US6649514B1EEPROM device having improved data retention and process for fabricating the deviceLATTICE SEMICONDUCTOR CORP·Filed 2002·Granted Nov 18, 2003·16 cites·16 claims
- 4274US6611463B1Zero-power programmable memory cellLATTICE SEMICONDUCTOR CORP·Filed 2001·Granted Aug 26, 2003·19 cites·31 claims
- 4374US6287916B1Method for forming a semiconductor device using LPCVD nitride to protect floating gate from charge lossLATTICE SEMICONDUCTOR CORP·Filed 2000·Granted Sep 11, 2001·17 cites·6 claims
- 4474US5789269AField implant for semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 4, 1998·41 cites·14 claims
- 4573US6977408B1High-performance non-volatile memory device and fabrication processLATTICE SEMICONDUCTOR CORP·Filed 2003·Granted Dec 20, 2005·20 cites·20 claims
- 4673US6570212B1Complementary avalanche injection EEPROM cellLATTICE SEMICONDUCTOR CORP·Filed 2000·Granted May 27, 2003·19 cites·14 claims
- 4772US6172392B1Boron doped silicon capacitor plateVANTIS CORP·Filed 1999·Granted Jan 9, 2001·28 cites·37 claims
- 4872US5885904AMethod to incorporate, and a device having, oxide enhancement dopants using gas immersion laser doping (GILD) for selectively growing an oxide layerADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·40 cites·25 claims
- 4971US6455593B1Method of dynamic retardation of cell cycle kinetics to potentiate cell damageHENRY JACKSON FOUNDATION FOR T·Filed 2001·Granted Sep 24, 2002·5 cites·10 claims
- 5071US6208559B1Method of operating EEPROM memory cells having transistors with thin gate oxide and reduced disturbLATTICE SEMICONDUCTOR CORP·Filed 1999·Granted Mar 27, 2001·33 cites·29 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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